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SQJ412EP-T1_GE3

更新时间： 2024-11-09 20:06:07
品牌 Logo 应用领域
威世 - VISHAY 脉冲晶体管
页数 文件大小 规格书
11页 193K
描述
Power Field-Effect Transistor, 32A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN

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SQJ412EP-T1_GE3 技术参数

是否Rohs认证： 符合生命周期：Not Recommended
包装说明：SMALL OUTLINE, R-PSSO-G4Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：20 weeks 1 day
风险等级：5.7雪崩能效等级（Eas）：140 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (ID)：32 A
最大漏源导通电阻：0.0045 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G4元件数量：1
端子数量：4工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：128 A认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管元件材料：SILICONBase Number Matches：1

SQJ412EP-T1_GE3 数据手册

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SQJ412EP  
Vishay Siliconix  
www.vishay.com  
Automotive N-Channel 40 V (D-S) 175 °C MOSFET  
FEATURES  
• TrenchFET® Power MOSFET  
• AEC-Q101 Qualifiedd  
PRODUCT SUMMARY  
VDS (V)  
40  
RDS(on) () at VGS = 10 V  
RDS(on) () at VGS = 4.5 V  
ID (A)  
0.0041  
0.0052  
32  
• 100 % Rg and UIS Tested  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
Configuration  
Single  
D
PowerPAK® SO-8L Single  
5.13 mm  
6.15 mm  
G
D
4
G
3
S
S
N-Channel MOSFET  
2
S
1
S
ORDERING INFORMATION  
Package  
PowerPAK SO-8L  
SQJ412EP-T1-GE3  
Lead (Pb)-free and Halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
40  
V
VGS  
20  
TC = 25 °C  
32  
Continuous Drain Currenta  
ID  
T
C = 125 °C  
32  
Continuous Source Current (Diode Conduction)a  
Pulsed Drain Currentb  
IS  
32  
A
IDM  
IAS  
EAS  
128  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
53  
L = 0.1 mH  
140  
mJ  
W
TC = 25 °C  
83  
27  
Maximum Power Dissipationb  
PD  
TC = 125 °C  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)e, f  
TJ, Tstg  
- 55 to + 175  
260  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
65  
UNIT  
Junction-to-Ambient  
PCB Mountc  
°C/W  
Junction-to-Case (Drain)  
RthJC  
1.8  
Notes  
a. Package limited.  
b. Pulse test; pulse width 300 μs, duty cycle 2 %.  
c. When mounted on 1" square PCB (FR-4 material).  
d. Parametric verification ongoing.  
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a  
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to  
ensure adequate bottom side solder interconnection.  
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
S12-1860-Rev. C, 13-Aug-12  
Document Number: 65935  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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