SQJ168ELP
Vishay Siliconix
www.vishay.com
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1
S
2
3
S
S
D
4
G
Top View
Bottom View
PRODUCT SUMMARY
VDS (V)
G
60
R
DS(on) (Ω) at VGS = 10 V
DS(on) (Ω) at VGS = 4.5 V
0.036
0.040
24
R
N-Channel MOSFET
S
ID (A)
Configuration
Package
Single
PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
Gate-source voltage
VDS
60
20
V
VGS
T
C = 25 °C a
C = 125 °C
24
Continuous drain current
ID
T
14
Continuous source current (diode conduction) a
Pulsed drain current b
IS
49
A
IDM
IAS
96
Single pulse avalanche current
Single pulse avalanche energy
17
L = 0.1 mH
EAS
14.4
29.4
9.8
mJ
W
T
C = 25 °C
Maximum power dissipation
PD
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
TJ, Tstg
-55 to +175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
42
UNIT
Junction-to-ambient
PCB mount c
°C/W
Junction-to-case (drain)
RthJC
2.8
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
S21-0456-Rev. A, 17-May-2021
Document Number: 63078
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000