SQJ144EP
Vishay Siliconix
www.vishay.com
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® Gen IV power MOSFET
PowerPAK® SO-8L
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
• Qgd/Qgs ratio < 1 optimizes switching
characteristics
1
S
• Material categorization:
for definitions of compliance please see
2
S
3
4
G
S
www.vishay.com/doc?99912
D
Top View
Bottom View
PRODUCT SUMMARY
VDS (V)
40
G
R
DS(on) () at VGS = 10 V
0.0046
130
ID (A)
Configuration
Package
Single
S
PowerPAK SO-8L
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
40
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
T
C = 25 °C
130
Continuous drain current
ID
T
C = 125 °C
75
Continuous source current (diode conduction)
Pulsed drain current a
IS
134
A
IDM
IAS
238
Single pulse avalanche current
Single pulse avalanche energy
23
L = 0.1 mH
EAS
26.5
148
mJ
W
TC = 25 °C
Maximum power dissipation a
PD
TC = 125 °C
49
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
TJ, Tstg
-55 to +175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
68
UNIT
Junction-to-ambient
PCB mountb
°C/W
Junction-to-case (drain)
RthJC
1.0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
S20-0201-Rev. A, 30-Mar-2020
Document Number: 77430
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000