5807AUS thru 5811AUS
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” surface mount rectifier diode series is ideal for high-reliability
applications where a failure cannot be tolerated. They serve as good alternates for the
industry-recognized 1N5807US thru 1N5811US rectifiers with 6.0 Amp ratings and working
peak reverse voltages from 50 to 150 volts. They are hermetically sealed with voidless-glass
construction using an internal “Category I or III” metallurgical bonds. These devices are also
available in axial-leaded package configurations (see separate data sheet for 5807A thru
5811A). Microsemi also offers numerous other rectifier products to meet higher and lower
current ratings with various recovery time speed requirements including standard, fast, and
ultrafast device types in both through-hole and surface mount packages.
Package “E”
or D-5B
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
Surface mount packages similar to 1N5807 to 1N5811
• Ultrafast recovery 6 Amp rectifiers series 50 to 150 V
•
•
•
•
•
Voidless-hermetically-sealed glass package
Extremely robust construction
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
Triple-layer passivation
Internal “Category I or III” metallurgical bonds
Options for screening in accordance with MIL-PRF-19500 for
JAN, JANTX, JANTXV, and JANS are available by adding
MQ, MX, MV, or SP prefixes respectively to part numbers
similar to the MIL-PRF-19500/477 process flow and testing
only for those Electrical Characteristics listed below.
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in
Microsemi MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
Operating Temperature: -65oC to +175oC.
Storage Temperature: -65oC to +175oC.
•
•
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINALS: End caps are Copper with
Tin/Lead (Sn/Pb) finish.
Average Rectified Forward Current (IO): 6 Amps @ TEC
75ºC End Cap temperature (see note 1)
=
•
•
•
•
MARKING & POLARITY: Cathode band only
Tape & Reel option: Standard per EIA-481-B
Weight: 539 mg
•
•
•
•
Thermal Resistance: 10 ºC/W junction to end cap
Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
Forward Surge Current (8.3 ms half sine) 125 Amps
Capacitance: 70 pF
See package dimensions and recommended pad
layout on last page
•
Solder temperature: 260ºC for 10 s (maximum)
ELECTRICAL CHARACTERISTICS
WORKING BREAKDOWN
AVERAGE
AVERAGE
MAXIMUM
FORWARD
VOLTAGE
@ 4 A
(8.3 ms pulse)
VF
REVERSE
CURRENT
(MAX)
SURGE
CURRENT
(MAX)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
PEAK
REVERSE
VOLTAGE
VOLTAGE
(MIN.)
@ 100μA
RECTIFIED RECTIFIED
CURRENT
CURRENT
TYPE
I
I
@ V
I
FSM
O1
O2
RWM
V
t
rr
IR
(NOTE 3)
AMPS
V
@TA=55ºC
(Note 2)
AMPS
RWM
BR
@T =75ºC
EC
(Note 1)
AMPS
VOLTS
VOLTS
VOLTS
ns
μA
25oC
125oC 25oC 125oC
5807AUS
5809AUS
5811AUS
50
60
6.0
6.0
6.0
3.0
3.0
3.0
0.925
0.800
0.800
0.800
5
5
5
575
575
575
125
125
125
40
40
40
100
150
110
160
0.925
0.925
NOTE 1: Rated at TEC = 75ºC. Derate at 60 mA/ºC for TEC above 75ºC
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC
NOTE 3: TA = 25oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: I = 1.0 A, I
= 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min
RM
F
Copyright © 2007
3-22-2007 Rev D
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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