Datasheet > SP5770A

SP5770A

更新时间： 2024-01-01 13:31:52

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
2页	58K
描述
Rectifier Diode, 1 Element, Silicon, CERAMIC, FLAT PACK-10

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技术参数
数据手册

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SP5770A 技术参数

生命周期：	Obsolete	包装说明：	CERAMIC, FLAT PACK-10
针数：	10	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.84
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	R-CDSO-F10
JESD-609代码：	e0	元件数量：	1
端子数量：	10	最高工作温度：	150 °C
最低工作温度：	-65 °C	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
最大功率耗散：	0.4 W	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	FLAT	端子位置：	DUAL
Base Number Matches：	1

SP5770A 数据手册

5770A

Isolated Diode Array with

HiRel MQ, MX, MV, and SP Screening Options

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These low capacitance diode arrays with common anode are multiple, discrete, isolated

junctions fabricated by a planar process and mounted in a 10-PIN package for use as

steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing

them to ground (see figure 1). This circuit application is further complimented by the

1N5768 (separate data sheet) that has a common cathode. An external TVS diode may

be added between the positive supply line and ground to prevent overvoltage on the

supply rail. They may also be used in fast switching core-driver applications. This

includes computers and peripheral equipment such as magnetic cores, thin-film

memories, plated-wire memories, etc., as well as decoding or encoding applications.

These arrays offer many advantages of integrated circuits such as high-density

packaging and improved reliability. This is a result of fewer pick and place operations,

smaller footprint, smaller weight, and elimination of various discrete packages that may

not be as user friendly in PC board mounting.

10-PIN Ceramic

Flat Pack

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

High Frequency Data Lines

RS-232 & RS-422 Interface Networks

Ethernet: 10 Base T

Computer I/O Ports

LAN

•

Hermetic Ceramic Package

Isolated Diodes To Eliminate Cross-Talk Voltages

High Breakdown Voltage V_BR> 60 V at 10 μA

Low Leakage I_R< 100nA at 40 V

Low Capacitance C < 8.0 pF

Switching Core Drivers

IEC 61000-4 Compatible (see circuit in figure 1)

61000-4-2 ESD : Air 15kV, contact 8kW

61000-4-4 (EFT) : 40A – 5/50 ns

61000-4-5 (surge): 12A 8/20 μs

Options for screening in accordance with MIL-PRF-

19500/474 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or SP prefixes

respectively to part numbers. For example, designate

MX5770A for a JANTX screen.

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

V_BRReverse Breakdown Voltage 60 V min (Notes 1 & 2)

I_OContinuous Forward Current 300 mA (Notes 1 & 3)

•

10-PIN Ceramic Flat Pack

Weight 0.25 grams (approximate)

_FSMForward Surge Current (tp=1/120 s) 500 mA (Note 1)

Marking: Logo, part number, date code and dot

identifying pin #1

400 mW Power Dissipation per Junction @ 25^oC

500 mW Power Dissipation per Package @ 25^oC (Note 4)

Operating Junction Temperature range –65 to +150^oC

Storage Temperature range of –65 to +150^oC

•

Carrier Tubes; 19 pcs (standard)

NOTE 1: Each Diode

NOTE 2: Pulsed: P_W= 100 ms max; duty cycle <20%

NOTE 3: Derate at 2.4 mA/^oC above +25^oC

NOTE 4: Derate at 4.0 mW/^oC above +25^oC

MAXIMUM

REVERSE

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM

REVERSE

CURRENT

MAXIMUM

CAPACITANCE

(PIN TO PIN)

RECOVERY TIME

FORWARD

trr

RECOVERY TIME

PART

NUMBER

I = I_R= 200 mA

i = 20 mA

C_t

I = 100 mA

V_R= 0 V

F = 1 MHz

I = 500 mA

R = 100 ohms

(Note 1)

V_R= 40 V

Vdc

μAdc

5770A

0.1

8.0

NOTE 1: Pulsed: P_W= 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.

3-27-2007

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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与SP5770A相关器件

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