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SN75512C PDF预览

SN75512C

更新时间: 2024-09-20 04:31:15
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德州仪器 - TI 显示器驱动
页数 文件大小 规格书
7页 85K
描述
VACUUM FLUORESCENT DISPLAY DRIVERS

SN75512C 数据手册

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SN65512C, SN75512C  
VACUUM FLUORESCENT DISPLAY DRIVERS  
SLDS054 – D3516, MAY 1990  
DW OR N PACKAGE  
(TOP VIEW)  
Each Device Drives 12 Lines  
60-V Output Voltage Swing Capability  
25-mA Output Source Current Capability  
High-Speed Serially-Shifted Data Input  
TTL-Compatible Inputs  
Q11  
Q12  
Q10  
Q9  
Q8  
Q7  
V
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
STROBE  
SERIAL OUT  
DATA IN  
Latches on All Driver Outputs  
CC2  
V
15 GND  
description  
CC1  
14  
13  
12  
11  
CLOCK  
Q6  
Q5  
Q4  
Q3  
The SN65512C and SN75512C are monolithic  
LATCH ENABLE  
BIDFET integrated circuits designed to drive a  
Q1  
Q2  
dot matrix or segmented vacuum fluorescent  
display.  
All device inputs are diode-clamped pnp inputs  
and assume a high logic level when open  
circuited. The nominal input threshold is 1.5 V.  
Outputs are totem-pole structures formed by an  
npn emitter follower and double-diffused MOS  
(DMOS) transistors.  
logic symbol  
TTL/VAC  
FLUOR DISPLAY  
8
3
LATCH ENABLE  
STROBE  
The device consists of a 12-bit shift register,  
12 latches, and 12 output AND gates. Serial data  
is entered into the shift register on the low-to-high  
transitionofCLOCK. Whenhigh, LATCHENABLE  
transfers the shift register contents to the outputs  
of the 12 latches. The active-low STROBE input  
enables all Q outputs. Serial data output from the  
shift register can be used to cascade shift  
registers. This output is not affected by LATCH  
ENABLE or STROBE.  
SRG12  
C1/  
7
5
CLOCK  
DATA IN  
9
10  
11  
12  
13  
14  
17  
18  
19  
20  
1
2D  
2D  
2D  
2D  
2D  
2D  
2D  
2D  
2D  
2D  
2D  
2D  
3
3
3
3
3
3
3
3
3
3
3
3
Q1  
Q2  
Q3  
Q4  
The SN65512C is characterized for operation  
from 40°C to 85°C. The SN75512C is  
characterized for operation from 0°C to 70°C.  
Q5  
Q6  
Q7  
Q8  
Q9  
Q10  
Q11  
2
Q12  
4
SERIAL OUT  
This symbol is in accordance with ANSI/IEEE Std 91-1984  
and IEC Publication 617-12.  
BIDFET – Bipolar, double-diffused, N-channel and P-channel MOS transistors on same chip. This is a patented process.  
Copyright 1990, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
4–1  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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