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ꢋ ꢌꢍꢎ ꢄꢏ ꢐ ꢑꢍꢁ ꢎꢒꢋ ꢎꢓ ꢀꢍ ꢋ ꢍꢅꢏ ꢑꢁꢈ ꢁꢔ ꢕ ꢈꢋꢏ
SCES338E − SEPTEMBER 2000 − REVISED APRIL 2005
SN54LV10A . . . J OR W PACKAGE
SN74LV10A . . . D, DB, DGV, NS, OR PW PACKAGE
(TOP VIEW)
D
D
D
D
D
D
D
2-V to 5.5-V V
Operation
CC
Max t of 7 ns at 5 V
pd
Typical V
<0.8 V at V
(Output Ground Bounce)
OLP
CC
1
2
3
4
5
6
7
14
13
12
11
10
9
1A
1B
2A
2B
2C
V
CC
= 3.3 V, T = 25°C
A
1C
1Y
3C
3B
3A
3Y
Typical V
>2.3 V at V
(Output V
Undershoot)
OHV
CC
OH
= 3.3 V, T = 25°C
A
I
Supports Partial-Power-Down Mode
off
Operation
2Y
GND
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
8
ESD Protection Exceeds JESD 22
− 2000-V Human-Body Model (A114-A)
− 200-V Machine Model (A115-A)
SN54LV10A . . . FK PACKAGE
(TOP VIEW)
− 1000-V Charged-Device Model (C101)
description/ordering information
3
2
1
20 19
18
1Y
NC
3C
2A
NC
2B
4
5
6
7
8
These triple 3-input positive-NAND gates are
17
16
designed for 2-V to 5.5-V V
operation.
CC
15 NC
14
9 10 11 12 13
NC
2C
The ’LV10A devices perform the Boolean function
Y = A • B • C or Y = A + B + C in positive logic.
3B
These devices are fully specified for
partial-power-down applications using I . The I
off
off
circuitry disables the outputs, preventing
damaging current backflow through the devices
when they are powered down.
NC − No internal connection
ORDERING INFORMATION
ORDERABLE
PART NUMBER
TOP-SIDE
MARKING
†
PACKAGE
T
A
Tube of 50
SN74LV10AD
SOIC − D
LV10A
Reel of 2500
Reel of 2000
Reel of 2000
Tube of 90
SN74LV10ADR
SN74LV10ANSR
SN74LV10ADBR
SN74LV10APW
SN74LV10APWR
SN74LV10APWT
SN74LV10ADGVR
SNJ54LV10AJ
SOP − NS
74LV10A
LV10A
SSOP − DB
−40°C to 85°C
Reel of 2000
Reel of 250
Reel of 2000
Tube of 25
TSSOP − PW
LV10A
TVSOP − DGV
CDIP − J
LV10A
SNJ54LV10AJ
SNJ54LV10AW
SNJ54LV10AFK
−55°C to 125°C CFP − W
Tube of 150
Tube of 55
SNJ54LV10AW
SNJ54LV10AFK
LCCC − FK
†
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design
guidelines are available at www.ti.com/sc/package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2005, Texas Instruments Incorporated
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1
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