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SN74CBT6800C PDF预览

SN74CBT6800C

更新时间: 2024-09-18 11:13:03
品牌 Logo 应用领域
德州仪器 - TI 开关
页数 文件大小 规格书
16页 459K
描述
具有 –2V 下冲保护的 5V、1:1 (SPST)、10 通道通用 FET 总线开关

SN74CBT6800C 数据手册

 浏览型号SN74CBT6800C的Datasheet PDF文件第2页浏览型号SN74CBT6800C的Datasheet PDF文件第3页浏览型号SN74CBT6800C的Datasheet PDF文件第4页浏览型号SN74CBT6800C的Datasheet PDF文件第5页浏览型号SN74CBT6800C的Datasheet PDF文件第6页浏览型号SN74CBT6800C的Datasheet PDF文件第7页 
ꢀꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢈꢉ ꢉꢄ  
ꢊ ꢉ ꢋꢅꢌ ꢆ ꢍ ꢎꢆ ꢅꢏꢀ ꢀꢐ ꢌ ꢆꢄ ꢑ ꢐ ꢌꢆ ꢑ ꢒꢓꢎ ꢄꢑꢔꢓ ꢕꢎ ꢖ ꢗ ꢏꢆ ꢒ ꢏꢆꢀ  
SCDS138 − OCTOBER 2003  
D
D
D
Member of the Texas Instruments  
WidebusFamily  
Undershoot Protection for Off-Isolation on  
A and B Ports Up to −2 V  
D
V
Operating Range From 4 V to 5.5 V  
CC  
D
D
D
D
D
Data I/Os Support 0 to 5-V Signaling Levels  
(0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)  
Control Inputs Can be Driven by TTL or  
5-V/3.3-V CMOS Outputs  
B-Port Outputs Are Precharged by Bias  
Voltage (BIASV) to Minimize Signal  
Distortion During Live Insertion and  
Hot-Plugging  
I
Supports Partial-Power-Down Mode  
off  
Operation  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
D
D
D
D
Supports PCI Hot Plug  
Bidirectional Data Flow, With Near-Zero  
Propagation Delay  
ESD Performance Tested Per JESD 22  
− 2000-V Human-Body Model  
(A114-B, Class II)  
Low ON-State Resistance (r  
)
on  
Characteristics (r = 3 Typical)  
− 1000-V Charged-Device Model (C101)  
on  
Low Input/Output Capacitance Minimizes  
Loading and Signal Distortion  
D
Supports Both Digital and Analog  
Applications: PCI Interface, Memory  
Interleaving, Bus Isolation, Low-Distortion  
Signal Gating  
(C  
= 5.5 pF Typical)  
io(OFF)  
D
D
Data and Control Inputs Provide  
Undershoot Clamp Diodes  
Low Power Consumption  
(I  
= 3 µA Max)  
CC  
DB, DBQ, DGV, DW, OR PW PACKAGE  
(TOP VIEW)  
1
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
ON  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
V
CC  
B1  
2
3
B2  
B3  
B4  
B5  
B6  
B7  
B8  
B9  
4
5
6
7
8
9
10  
11  
12  
A9  
A10  
GND  
B10  
BIASV  
description/ordering information  
The SN74CBT6800C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r ),  
on  
allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the  
SN74CBT6800C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring  
that the switch remains in the proper OFF state. The device also precharges the B port to a user-selectable bias  
voltage (BIASV) to minimize live-insertion noise.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Widebus is a trademark of Texas Instruments.  
ꢆꢧ  
Copyright 2003, Texas Instruments Incorporated  
ꢣ ꢧ ꢤ ꢣꢜ ꢝꢱ ꢟꢞ ꢢ ꢪꢪ ꢨꢢ ꢠ ꢢ ꢡ ꢧ ꢣ ꢧ ꢠ ꢤ ꢬ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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