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SN74CBT6845CDWG4

更新时间： 2024-01-24 09:00:24
品牌 Logo 应用领域
德州仪器 - TI 总线驱动器总线收发器开关逻辑集成电路光电二极管输出元件
页数 文件大小 规格书
20页 680K
描述
8-BIT FET BUS SWITCH WITH PRECHARGED OUTPUTS 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION

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中文翻译

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SN74CBT6845CDWG4 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：GREEN, PLASTIC, SOIC-20针数：20
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.84Is Samacsys：N
系列：CBT/FST/QS/5C/BJESD-30 代码：R-PDSO-G20
JESD-609代码：e4长度：12.8 mm
逻辑集成电路类型：BUS DRIVER湿度敏感等级：1
位数：1功能数量：8
端口数量：2端子数量：20
最高工作温度：85 °C最低工作温度：-40 °C
输出特性：3-STATE输出极性：TRUE
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP20,.4封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
电源：5 V传播延迟（tpd）：0.24 ns
认证状态：Not Qualified座面最大高度：2.65 mm
子类别：Bus Driver/Transceivers最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：7.5 mmBase Number Matches：1

SN74CBT6845CDWG4 数据手册

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SCDS140 − OCTOBER 2003  
D
D
Undershoot Protection for Off-Isolation on  
A and B Ports Up To −2 V  
D
V
Operating Range From 4 V to 5.5 V  
CC  
D
D
D
D
D
Data I/Os Support 0 to 5-V Signaling Levels  
(0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)  
B-Port Outputs Are Precharged by Bias  
Voltage (BIASV) to Minimize Signal  
Distortion During Live Insertion and  
Hot-Plugging  
Control Inputs Can be Driven by TTL or  
5-V/3.3-V CMOS Outputs  
I
Supports Partial-Power-Down Mode  
off  
D
D
D
D
Supports PCI Hot Plug  
Operation  
Bidirectional Data Flow, With Near-Zero  
Propagation Delay  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
Low ON-State Resistance (r  
)
on  
ESD Performance Tested Per JESD 22  
− 2000-V Human-Body Model  
(A114-B, Class II)  
Characteristics (r = 3 Ω Typical)  
on  
Low Input/Output Capacitance Minimizes  
Loading and Signal Distortion  
− 1000-V Charged-Device Model (C101)  
(C  
= 5.5 pF Typical)  
io(OFF)  
D
Supports Both Digital and Analog  
Applications: PCI Interface, Memory  
Interleaving, Bus Isolation, Low-Distortion  
Signal Gating  
D
D
Data and Control Inputs Provide  
Undershoot Clamp Diodes  
Low Power Consumption  
(I  
= 3 µA Max)  
CC  
DB, DBQ, DGV, DW, OR PW PACKAGE  
(TOP VIEW)  
RGY PACKAGE  
(TOP VIEW)  
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10  
20  
19  
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17  
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11  
V
BIASV  
A1  
CC  
OE  
B1  
B2  
B3  
B4  
B5  
B6  
B7  
B8  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
GND  
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19  
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12  
2
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9
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
OE  
B1  
B2  
B3  
B4  
B5  
B6  
B7  
10  
11  
description/ordering information  
The SN74CBT6845C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r ),  
on  
allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the  
SN74CBT6845C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring  
that the switch remains in the proper OFF state. The device also precharges the B port to a user-selectable bias  
voltage (BIASV) to minimize live-insertion noise.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
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Copyright 2003, Texas Instruments Incorporated  
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1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...20

中文翻译

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SN74CBT6845CDWG4 替代型号

型号 品牌 替代类型 描述 数据表
SN74CBT6845CDWRG4 TI

完全替代

 8-BIT FET BUS SWITCH WITH PRECHARGED OUTPUTS 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTIO
SN74CBT6845CDWR TI

完全替代

 8-BIT FET BUS SWITCH WITH PRECHARGED OUTPUTS 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTIO
SN74CBT6845CDW TI

完全替代

 8-BIT FET BUS SWITCH WITH PRECHARGED OUTPUTS 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTIO

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