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SN74AUP1G125DCKT

更新时间： 2024-11-23 23:03:11
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德州仪器 - TI 输出元件
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15页 299K
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LOW-POWER SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT

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SN74AUP1G125DCKT 数据手册

 浏览型号SN74AUP1G125DCKT的Datasheet PDF文件第2页浏览型号SN74AUP1G125DCKT的Datasheet PDF文件第3页浏览型号SN74AUP1G125DCKT的Datasheet PDF文件第4页浏览型号SN74AUP1G125DCKT的Datasheet PDF文件第5页浏览型号SN74AUP1G125DCKT的Datasheet PDF文件第6页浏览型号SN74AUP1G125DCKT的Datasheet PDF文件第7页 
SN74AUP1G125  
LOW-POWER SINGLE BUS BUFFER GATE  
WITH 3-STATE OUTPUT  
www.ti.com  
SCES595E–JULY 2004–REVISED JULY 2005  
FEATURES  
•
•
•
Available in the Texas Instruments  
NanoStar™ and NanoFree™ Packages  
•
•
•
Wide Operating VCC Range of 0.8 V to 3.6 V  
Optimized for 3.3-V Operation  
Low Static-Power Consumption  
(ICC = 0.0 µA Max)  
3.6-V I/O Tolerant to Support Mixed-Mode  
Signal Operation  
Low Dynamic-Power Consumption  
(Cpd = 4 pF Typ at 3.3 V)  
•
•
•
tpd = 4.6 ns Max at 3.3 V  
Suitable for Point-to-Point Applications  
•
•
Low Input Capacitance (Ci = 1.5 pF Typ)  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
Low Noise – Overshoot and Undershoot  
<10% of VCC  
•
ESD Performance Tested Per JESD 22  
•
•
•
Input-Disable Feature Allows Floating Input  
Conditions  
– 2000-V Humna-Body Model  
(A114-B, Class II)  
Ioff Supports Partial-Power-Down Mode  
Operation  
– 200-V Machine Model (A115-A)  
– 1000-V Charged-Device Model (C101)  
Input Hysteresis Allows Slow Input Transition  
and Better Switching Noise Immunity at Input  
•
ESD Protection Exceeds ±5000 V With  
Human-Body Model  
YEP OR YZP PACKAGE  
(BOTTOM VIEW)  
DBV PACKAGE  
(TOP VIEW)  
DCK PACKAGE  
(TOP VIEW)  
DRL PACKAGE  
(TOP VIEW)  
3
4
Y
GND  
A
1
2
3
5
OE  
A
V
CC  
OE  
A
V
1
2
3
5
CC  
1
2
3
5
4
OE  
A
V
Y
CC  
2
1
5
V
OE  
CC  
4
GND  
Y
4
GND  
Y
GND  
See mechanical drawings for dimensions.  
DESCRIPTION/ORDERING INFORMATION  
The AUP family is TI's premier solution to the industry's low-power needs in battery-powered portable  
applications. This family ensures a very low static and dynamic power consumption across the entire VCC range  
of 0.8 V to 3.6 V, resulting in an increased battery life. This product also maintains excellent signal integrity (see  
Figures 1 and 2).  
xxxx  
Switching Characteristics  
†
Static-Power Consumption  
Dynamic-Power Consumption  
(pF)  
at 25 MHz  
(µA)  
3.5  
3
100%  
80%  
100%  
2.5  
2
80%  
Input  
Output  
1.5  
1
60%  
40%  
60%  
40%  
3.3-V  
3.3-V  
†  
†
Logic  
Logic  
0.5  
0
20%  
0%  
20%  
0%  
−0.5  
20  
Time − ns  
AUP  
0
5
10  
15  
25  
35 40 45  
AUP  
30  
†
Single, dual, and triple gates  
†
AUP1G08 data at C = 15 pF  
L
Figure 1. AUP – The Lowest-Power Family  
Figure 2. Excellent Signal Integrity  
xxx  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NanoStar, NanoFree are trademarks of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2004–2005, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1234567...15

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SN74AUP1G125DCKT 替代型号

型号 品牌 替代类型 描述 数据表
SN74AUP1G125DBVR TI

完全替代

 LOW-POWER SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT
SN74AUP1G125DRYR TI

类似代替

 LOW-POWER SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT
SN74AUP1G125DCKR TI

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 LOW-POWER SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT

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