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SN74AUP1G126DBVRE4 PDF预览

SN74AUP1G126DBVRE4

更新时间: 2024-11-26 14:38:35
品牌 Logo 应用领域
德州仪器 - TI 驱动光电二极管逻辑集成电路
页数 文件大小 规格书
15页 233K
描述
IC,BUFFER/DRIVER,SINGLE,1-BIT,CMOS,TSOP,5PIN,PLASTIC

SN74AUP1G126DBVRE4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:LSSOP, TSOP5/6,.11,37
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.63控制类型:ENABLE HIGH
系列:AUP/ULP/VJESD-30 代码:R-PDSO-G5
长度:2.9 mm负载电容(CL):30 pF
逻辑集成电路类型:BUS DRIVER最大I(ol):0.0017 A
位数:1功能数量:1
端口数量:2端子数量:5
最高工作温度:85 °C最低工作温度:-40 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装等效代码:TSOP5/6,.11,37封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH包装方法:TR
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.2/3.3 V
Prop。Delay @ Nom-Sup:21.4 ns传播延迟(tpd):21.4 ns
认证状态:Not Qualified座面最大高度:1.45 mm
子类别:Bus Driver/Transceivers最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.8 V标称供电电压 (Vsup):1.2 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:1.6 mm
Base Number Matches:1

SN74AUP1G126DBVRE4 数据手册

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SCES596B – JULY 2004 – REVISED APRIL 2005  
D
D
D
Available in the Texas Instruments  
NanoStarand NanoFreePackages  
Low Static-Power Consumption  
D
Wide Operating V  
Range of 0.8 V to 3.6 V  
CC  
D
Optimized for 3.3-V Operation  
D
D
D
D
3.6-V I/O Tolerant to Support Mixed-Mode  
Signal Operation  
(I  
= 0.9 µA Max)  
CC  
Low Dynamic-Power Consumption  
t
= 4.6 ns Max at 3.3 V  
pd  
(C = 4 pF Typ at 3.3 V)  
pd  
Suitable for Point-to-Point Applications  
D
Low Input Capacitance (C = 1.5 pF Typ)  
i
Low Noise − Overshoot and Undershoot  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
D
<10% of V  
CC  
D
ESD Performance Tested Per JESD 22  
− 2000-V Human-Body Model  
(A114-B, Class II)  
− 200-V Machine Model (A115-A)  
− 1000-V Charged-Device Model (C101)  
D
D
D
Input-Disable Feature Allows Floating Input  
Conditions  
I
Supports Partial-Power-Down Mode  
off  
Operation  
Input Hysteresis Allows Slow Input  
Transition and Better Switching Noise  
Immunity at Input  
D
ESD Protection Exceeds 5000 V With  
Human-Body Model  
DBV, DCK, OR DRL PACKAGE  
(TOP VIEW)  
YEP OR YZP PACKAGE  
(BOTTOM VIEW)  
3 4  
2
GND  
A
OE  
Y
V
1
2
3
5
4
OE  
A
GND  
V
Y
CC  
1 5  
CC  
description/ordering information  
The AUP family is TI’s premier solution to the industry’s low-power needs in battery-powered portable  
applications. This family ensures a very low static and dynamic power consumption across the entire V range  
CC  
of 0.8 V to 3.6 V, resulting in an increased battery life. This product also maintains excellent signal integrity (see  
Figures 1 and 2).  
Static-Power Consumption  
Dynamic-Power Consumption  
(pF)  
Switching Characteristics  
(µA)  
at 25 MHz  
3.5  
3
100%  
100%  
80%  
60%  
80%  
2.5  
2
Input  
Output  
60%  
40%  
3.3-V  
3.3-V  
†  
Logic  
1.5  
1
Logic  
40%  
0.5  
0
20%  
0%  
20%  
0%  
AUP  
AUP  
−0.5  
10  
15 20  
Time − ns  
0
5
25  
35 40 45  
30  
Single, dual, and triple gates  
AUP1G08 data at C = 15 pF  
L
Figure 2. Excellent Signal Integrity  
Figure 1. AUP − The Lowest-Power Family  
This bus buffer gate is a single line driver with a 3-state output. The output is disabled when the output-enable  
(OE) input is low. This device has the input-disable feature, which allows floating input signals.  
To ensure the high-impedance state during power up or power down, OE should be tied to GND through a  
pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the  
driver.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NanoStar and NanoFree are trademarks of Texas Instruments.  
ꢔꢤ  
Copyright 2005, Texas Instruments Incorporated  
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1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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