5秒后页面跳转
SN74AUP1G02DRY2 PDF预览

SN74AUP1G02DRY2

更新时间: 2024-11-28 11:07:11
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
13页 337K
描述
单路 2 输入、0.8V 至 3.6V 低功耗或非门 | DRY | 6 | -40 to 85

SN74AUP1G02DRY2 数据手册

 浏览型号SN74AUP1G02DRY2的Datasheet PDF文件第2页浏览型号SN74AUP1G02DRY2的Datasheet PDF文件第3页浏览型号SN74AUP1G02DRY2的Datasheet PDF文件第4页浏览型号SN74AUP1G02DRY2的Datasheet PDF文件第5页浏览型号SN74AUP1G02DRY2的Datasheet PDF文件第6页浏览型号SN74AUP1G02DRY2的Datasheet PDF文件第7页 
ꢀꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢈ ꢉꢊ  
ꢋ ꢌꢍꢎꢆꢌ ꢍ ꢏꢐ ꢀꢑ ꢁꢈ ꢋ ꢏ ꢊ ꢎꢑꢁ ꢆꢅꢒ ꢆꢌ ꢀꢑ ꢒ ꢑꢓꢏ ꢎꢁꢌ ꢐ ꢈ ꢄꢒꢏ  
SCES568B − JUNE 2004 − REVISED JUNE 2005  
D
D
D
Available in the Texas Instruments  
NanoStarand NanoFreePackages  
Low Static Power Consumption;  
D
D
D
D
D
D
Wide Operating V  
Range of 0.8 V to 3.6 V  
CC  
Optimized for 3.3-V Operation  
3.6-V I/O Tolerant to Support Mixed-Mode  
Signal Operation  
I
= 0.9 µA Max  
CC  
Low Dynamic Power Consumption;  
= 4.3 pF Typ at 3.3 V  
t
= 4.5 ns Max at 3.3 V  
pd  
C
pd  
Suitable for Point-to-Point Applications  
D
Low Input Capacitance; C = 1.5 pF Typ  
i
Low Noise; Overshoot and Undershoot  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
D
<10% of V  
CC  
D
ESD Performance Tested Per JESD 22  
− 2000-V Human-Body Model  
(A114-B, Class II)  
− 200-V Machine Model (A115-A)  
− 1000-V Charged-Device Model (C101)  
D
D
I
Supports Partial-Power-Down Mode  
off  
Operation  
Input Hysteresis Allows Slow Input  
Transition and Better Switching Noise  
Immunity at the Input  
D
ESD Protection Exceeds 5000 V With  
Human-Body Model  
(V  
= 250 mV Typ at 3.3 V)  
hys  
DCK PACKAGE  
(TOP VIEW)  
DBV PACKAGE  
(TOP VIEW)  
DRL PACKAGE  
(TOP VIEW)  
YEP OR YZP PACKAGE  
(BOTTOM VIEW)  
Y
3
2
1
4
5
GND  
1
2
3
5
A
B
V
A
B
V
Y
1
2
3
5
CC  
CC  
1
2
3
5
4
A
V
Y
CC  
B
A
V
CC  
4
GND  
B
4
GND  
Y
GND  
See mechanical drawings for dimensions.  
description/ordering information  
The AUP family is TI’s premier solution to the industry’s low-power needs in battery-powered portable  
applications. This family ensures a very low static and dynamic power consumption across the entire V range  
CC  
of 0.8 V to 3.6 V, resulting in an increased battery life. This product also maintains excellent signal integrity (see  
Figures 1 and 2).  
Static Power Consumption  
Dynamic Power Consumption  
(pF)  
Switching Characteristics  
at 25 MHz†  
(µA)  
3.5  
3
100%  
80%  
100%  
80%  
2.5  
2
Input  
Output  
60%  
40%  
60%  
40%  
3.3-V  
3.3-V  
†  
Logic  
1.5  
1
Logic  
0.5  
0
20%  
0%  
20%  
0%  
AUP  
AUP  
−0.5  
10  
15 20  
Time − ns  
0
5
25  
35 40 45  
30  
Single, dual, and triple gates  
AUP1G08 data at C = 15 pF  
L
Figure 2. Excellent Signal Integrity  
Figure 1. AUP − The Lowest-Power Family  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NanoStar and NanoFree are trademarks of Texas Instruments.  
ꢒꢡ  
Copyright 2005, Texas Instruments Incorporated  
ꢝ ꢡ ꢞ ꢝꢖ ꢗꢫ ꢙꢘ ꢜ ꢤꢤ ꢢꢜ ꢚ ꢜ ꢛ ꢡ ꢝ ꢡ ꢚ ꢞ ꢦ  
ꢞꢖ  
ꢟꢡ  
ꢜꢚ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

与SN74AUP1G02DRY2相关器件

型号 品牌 获取价格 描述 数据表
SN74AUP1G02DRYR TI

获取价格

LOW-POWER SINGLE 2-INPUT POSITIVE-NOR GATE
SN74AUP1G02DSFR TI

获取价格

LOW-POWER SINGLE 2-INPUT POSITIVE-NOR GATE
SN74AUP1G02YEPR TI

获取价格

LOW-POWER SINGLE 2-INPUT POSITIVE-NOR GATE
SN74AUP1G02YFPR TI

获取价格

LOW-POWER SINGLE 2-INPUT POSITIVE-NOR GATE
SN74AUP1G02YZPR TI

获取价格

LOW-POWER SINGLE 2-INPUT POSITIVE-NOR GATE
SN74AUP1G04 TI

获取价格

LOW POWER SINGLE INVERTER GATE
SN74AUP1G04_101 TI

获取价格

LOW-POWER SINGLE INVERTER GATE
SN74AUP1G04DBVR TI

获取价格

LOW POWER SINGLE INVERTER GATE
SN74AUP1G04DBVRE4 TI

获取价格

LOW-POWER SINGLE INVERTER GATE
SN74AUP1G04DBVRG4 TI

获取价格

LOW-POWER SINGLE INVERTER GATE