SN74ACT7804-25DL

更新时间： 2024-11-16 05:17:59

品牌	Logo	应用领域
德州仪器 - TI		存储光电二极管
页数	文件大小	规格书
13页	184K
描述
512 】 18 STROBED FIRST-IN, FIRST-OUT MEMORY

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SN74ACT7804-25DL 数据手册

SN74ACT7804

512 × 18 STROBED FIRST-IN, FIRST-OUT MEMORY

SCAS204C – APRIL 1992 – REVISED APRIL 1998

DL PACKAGE

(TOP VIEW)

Member of the Texas Instruments

Widebus Family

Load Clock and Unload Clock Can Be

Asynchronous or Coincident

RESET

D17

D16

D15

D14

D13

D12

D11

Q17

Q16

Q15

GND

Q14

512 Words by 18 Bits

Low-Power Advanced CMOS Technology

Full, Empty, and Half-Full Flags

Programmable Almost-Full/Almost-Empty

Flag

Q13

Q12

Fast Access Times of 15 ns With a 50-pF

Load and All Data Outputs Switching

Simultaneously

D10

47 Q11

Q10

Data Rates up to 50 MHz

3-State Outputs

GND 13

D7 14

44 GND

43 Q8

42 Q7

41 Q6

40 Q5

Pin-to-Pin Compatible With SN74ACT7806

and SN74ACT7814

D6 15

D5 16

Packaged in Shrink Small-Outline 300-mil

Package Using 25-mil Center-to-Center

Spacing

D4 17

D3 18

D2 19

38 Q4

D1 20

37 Q3

description

D0 21

36 Q2

A FIFO memory is a storage device that allows

data to be written into and read from its array at

independent data rates. The SN74ACT7804 is a

512-word by 18-bit FIFO for high speed and fast

access times. It processes data at rates up to

50 MHz and access times of 15 ns in a bit-parallel

format.

HF 22

35 GND

34 Q1

PEN 23

AF/AE 24

LDCK 25

NC 26

NC 27

FULL 28

33 Q0

32 UNCK

31 NC

30 NC

29 EMPTY

Data is written into memory on a low-to-high

transition at the load-clock (LDCK) input and is

read out on a low-to-high transition at the

unload-clock (UNCK) input. The memory is full

when the number of words clocked in exceeds the

number of words clocked out by 512. When the

memory is full, LDCK signals have no effect on the

data residing in memory. When the memory is

empty, UNCK signals have no effect.

NC – No internal connection

Status of the FIFO memory is monitored by the full (FULL), empty (EMPTY), half-full (HF), and

almost-full/almost-empty (AF/AE) flags. The FULL output is low when the memory is full and high when the

memory is not full. The EMPTY output is low when the memory is empty and high when it is not empty. The HF

output is high when the FIFO contains 256 or more words. The AF/AE status flag is a programmable flag. The

first one or two low-to-high transitions of LDCK after reset are used to program the almost-empty offset value

(X) and the almost-full offset value (Y) if program enable (PEN) is low. The AF/AE flag is high when the FIFO

contains X or fewer words or (512 – Y) or more words. The AF/AE flag is low when the FIFO contains between

(X + 1) and (511 – Y) words.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Widebus is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...13

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SN74ACT7804-25DL 替代型号

型号	品牌	替代类型	描述	数据表
SN74ACT7804-25DLR	TI	功能相似	512 】 18 STROBED FIRST-IN, FIRST-OUT MEMORY

与SN74ACT7804-25DL相关器件

型号	品牌	获取价格	描述	数据表
SN74ACT7804-25DLR	TI	获取价格	512 】 18 STROBED FIRST-IN, FIRST-OUT MEMORY
SN74ACT7804-40DL	TI	获取价格	512 】 18 STROBED FIRST-IN, FIRST-OUT MEMORY
SN74ACT7804-40DLR	TI	获取价格	512 】 18 STROBED FIRST-IN, FIRST-OUT MEMORY
SN74ACT7804DL	TI	获取价格	512 】 18 STROBED FIRST-IN, FIRST-OUT MEMORY
SN74ACT7805	TI	获取价格	256 】 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY
SN74ACT7805_06	TI	获取价格	256 】 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY
SN74ACT7805-15DL	TI	获取价格	256 】 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY
SN74ACT7805-15DLR	TI	获取价格	256 】 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY
SN74ACT7805-20DL	TI	获取价格	256 】 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY
SN74ACT7805-20DLR	TI	获取价格	256 】 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY

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