5秒后页面跳转
SMP600G-EM PDF预览

SMP600G-EM

更新时间: 2024-11-29 09:18:43
品牌 Logo 应用领域
SEME-LAB 光电二极管光电二极管
页数 文件大小 规格书
2页 69K
描述
P.I.N. PHOTODIODE

SMP600G-EM 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:HERMETIC, METAL CAN, TO-39, 2 PIN
Reach Compliance Code:compliantHTS代码:8541.40.60.50
风险等级:5.25其他特性:LOW NOISE
配置:SINGLE最大暗电源:6 nA
红外线范围:YES功能数量:1
最高工作温度:70 °C最低工作温度:-40 °C
光电设备类型:PIN PHOTODIODE最小反向击穿电压:60 V
形状:ROUND尺寸:5.9 mm

SMP600G-EM 数据手册

 浏览型号SMP600G-EM的Datasheet PDF文件第2页 
SMP600G-EM  
MECHANICALDATA  
P.I.N. PHOTODIODE  
Dimensions in mm.  
FEATURES  
• HIGH SENSITIVITY  
• VISIBLE AND UV BLIND  
Ø
Ø
9
.
1
±
0
.
.
2
1
• EXCELLENT LINEARITY  
• LOW NOISE  
8.  
1 ± 0  
W
INDOW  
9 ± 0.1  
Ø
5.  
• WIDE SPECTRAL RESPONSE  
• RG850 INTEGRAL OPTICAL FILTER  
• TO39 HERMETIC METAL CANPACKAGE  
• EMI SCREENING MESH AVAILABLE  
S
S
ENSITIVE  
U
RF AC  
E
Ø 0  
.45  
L
E
A
D
5
.
0
8
±
0.2  
DESCRIPTION  
The SMP600G-EM is a Silicon P.I.N. photodiode  
incorporated in a hermetic metal can package. The  
electrical terminations are via two leads of diameter 0.018"  
on a pitch of 0.2". The can structure incorporates an optical  
filter that only transmits infra-red light. The cathode of the  
photodiode is electrically connected to the package.  
2
1
The larger photodiode active area provides greater  
sensitivity than the SMP550 range of devices, with a slight  
reduction in speed. Inherent in the device geometry is a  
reduction in the receiving angle. The photodiode structure  
has been optimised for high sensitivity, light measurement  
applications. The metal can and optional screening mesh  
ensure a rugged device with a high degree of immunity to  
radiated electrical interference.  
TO-39 Package  
Pin 1 – Anode  
Pin 2 – Cathode & Case  
ABSOLUTE MAXIMUM RATINGS (T  
Operating temperature range  
= 25°C unless otherwise stated)  
-40°C to +70°C  
-45°C to +80°C  
0.35% per °C  
case  
Storage temperature range  
Temperature coefficient of responsively  
Temperature coefficient of dark current  
Reverse breakdown voltage  
x2 per 8°C rise  
60V  
Prelim. 1/98  
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.  

与SMP600G-EM相关器件

型号 品牌 获取价格 描述 数据表
SMP600G-EN SEME-LAB

获取价格

P.I.N. PHOTODIODE
SMP600G-FJ SEME-LAB

获取价格

P.I.N. PHOTODIODE
SMP600G-FK SEME-LAB

获取价格

P.I.N. PHOTODIODE
SMP600G-FL SEME-LAB

获取价格

P.I.N. PHOTODIODE
SMP600G-FM SEME-LAB

获取价格

P.I.N. PHOTODIODE
SMP600G-FN SEME-LAB

获取价格

P.I.N. PHOTODIODE
SMP60N03-10L TEMIC

获取价格

Power Field-Effect Transistor, 60A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
SMP60N03-10L VISHAY

获取价格

Power Field-Effect Transistor, 60A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
SMP60N05 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SMP60N06 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET