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SMP60N05 PDF预览

SMP60N05

更新时间: 2024-11-29 19:15:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
1页 155K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SMP60N05 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.86
配置:Single最大漏极电流 (Abs) (ID):60 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SMP60N05 数据手册

  

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