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SMLJ58A

更新时间： 2024-11-19 12:20:03
品牌 Logo 应用领域
伯恩斯 - BOURNS 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
5页 205K
描述
SMLJ Transient Voltage Suppressor Diode Series

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中文翻译

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SMLJ58A 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-214AB
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50Factory Lead Time：14 weeks
风险等级：1.52Is Samacsys：N
最大击穿电压：71.2 V最小击穿电压：64.4 V
击穿电压标称值：67.8 V最大钳位电压：93.6 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AB
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：3000 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL认证状态：Not Qualified
最大重复峰值反向电压：58 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SMLJ58A 数据手册

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Features  
Applications  
■ RoHS compliant*  
■ IEC 61000-4-2 ESD (Min. Level 4)  
■ IEC 61000-4-4 EFT  
■ Surface Mount SMC package  
■ Standoff Voltage: 5.0 to 170 volts  
■ Power Dissipation: 3000 watts  
■ IEC 61000-4-5 Surge  
SMLJ Transient Voltage Suppressor Diode Series  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components.  
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AB (SMC)  
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 170 V and Breakdown  
Voltage up to 200 V. Typical fast response times are less than 1.0 ns for unidirectional devices and less than 5.0 ns for bidirectional devices  
from 0 V to Minimum Breakdown Voltage.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Value  
Unit  
(Note 1,2)  
Minimum Peak Pulse Power Dissipation (T = 1 ms)  
P
P
3000  
Watts  
PK  
Peak Forward Surge Current  
8.3 ms Single Ha Sine Wave Superimposed on Rated Load  
(JEDEC Method)  
I
300  
Amps  
FSM  
(Note 3)  
Steady State Power Dissipation @ TL = 75 °C  
P
5.0  
Watts  
Volts  
M(AV)  
Maximum Instantaneous Forward Voltage @ I = 100 A  
PP  
(Note 5)  
V
F
J
(For Unidirectional Units Only)  
Operating Temperature Range  
Storage Temperature Range  
T
-55 to +150  
-55 to +175  
°C  
°C  
T
STG  
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above T = 25 °C per Pulse Derating Curve.  
A
2. Thermal Resistance Junction to Lead.  
3. 8.3 ms Single Ha-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).  
4. Single Phase, Ha Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.  
5.  
V
= 3.5 V on SMLJ5.0A through SMLJ90A and V = 5.0 V on SMLJ100A through SMLJ170A.  
F
F
How to Order  
SMLJ 5.0 CA  
Package  
SMLJ = SMC/DO-214AB  
Working Peak Reverse Voltage  
5.0 = 5.0 V  
(Volts)  
RWM  
Suffix  
A = 5 % Tolerance Unidirectional Device  
CA = 5 % Tolerance Bidirectional Device  
Asia-Pacific:  
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116  
Europe:  
Tel: +41-41 768 5555 • Fax: +41-41 768 5510  
The Americas:  
Tel: +1-951 781-5500 • Fax: +1-951 781-5700  
www.bourns.com  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
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中文翻译

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SMLJ58A 替代型号

型号 品牌 替代类型 描述 数据表
SMLJ58A-TP MCC

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 Trans Voltage Suppressor Diode, 3000W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-
3.0SMCJ58A PANJIT

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 SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 5.0 to 220 Volts 3000 Watt Peak Power
SMLJ58 MICROSEMI

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 UNIDIRECTIONAL AND BIDIRECTIONAL SURFACE MOUNT

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