是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DO-214AB |
包装说明: | R-PDSO-C2 | 针数: | 2 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | Factory Lead Time: | 14 weeks |
风险等级: | 1.17 | Samacsys Description: | ESD Suppressors / TVS Diodes 6volts 1000uA 291.3 Amps Bi-Dir |
最大击穿电压: | 8.15 V | 最小击穿电压: | 6.67 V |
击穿电压标称值: | 7.4 V | 最大钳位电压: | 10.3 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-214AB |
JESD-30 代码: | R-PDSO-C2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 3000 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 6 V | 子类别: | Transient Suppressors |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | Matte Tin (Sn) | 端子形式: | C BEND |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
3.0SMCJ6.0C | PANJIT |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMLJ6.0CAE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 3000W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21 | |
SMLJ6.0CAQ | MCC |
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Tape :3K/Reel, 48K/Ctn; | |
SMLJ6.0CATR | MICROSEMI |
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Trans Voltage Suppressor Diode, 3000W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-21 | |
SMLJ6.0CATRE3 | MICROSEMI |
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SMLJ6.0CE3 | MICROSEMI |
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SMLJ6.0E3TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 3000W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
SMLJ6.5 | MCC |
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SMLJ6.5A | BOURNS |
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SMLJ6.5A | MCC |
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Transient Voltage Suppressor 5.0 to 170 Volts 3000 Watt | |
SMLJ6.5AE3TR | MICROSEMI |
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3000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC PACKAGE-2 |