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SML50J50 PDF预览

SML50J50

更新时间: 2024-10-29 22:07:39
品牌 Logo 应用领域
SEME-LAB 高压高电压电源
页数 文件大小 规格书
2页 26K
描述
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML50J50 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Not Recommended包装说明:FLANGE MOUNT, R-PUFM-X4
Reach Compliance Code:compliant风险等级:5.1
雪崩能效等级(Eas):1300 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):50 A
最大漏源导通电阻:0.085 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PUFM-X4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SML50J50 数据手册

 浏览型号SML50J50的Datasheet PDF文件第2页 
SML50J50  
SOT–227 Package Outline.  
Dimensions in mm (inches)  
1 1.8 (0 .4 6 3 )  
1 2.2 (0 .4 8 0 )  
31 .5 (1 .2 4 0)  
31 .7 (1 .2 4 8)  
N–CHANNEL  
ENHANCEMENT MODE  
HIGH VOLTAGE  
8 .9 (0 .35 0 )  
9 .6 (0 .37 8 )  
7 .8 (0 .3 07 )  
8 .2 (0 .3 22 )  
4 .1 (0 .16 1)  
4 .3 (0 .16 9)  
W
=
Hex Nut M 4  
(4 places)  
4 .8 (0 .18 7)  
4 .9 (0 .19 3)  
(4 places)  
H =  
1
2
3
R
POWER MOSFETS  
4.0 (0 .1 57 )  
4.2 (0 .1 65 )  
0 .7 5 (0.03 0)  
0 .8 5 (0.03 3)  
4
VDSS  
500V  
50A  
3.3 (0.129)  
3.6 (0.143)  
5.1 (0.2 01 )  
5.9 (0.2 32 )  
4.0 (0.157)  
=
(2 Places)  
ID(cont)  
R
14.9 (0.587)  
15.1 (0.594)  
1 .9 5 (0 .07 7 )  
2.1 4 (0 .0 84 )  
3 0 .1 (1 .1 8 5 )  
3 0 .3 (1 .1 9 3 )  
RDS(on) 0.085  
S
D
G
38.0 (1.496)  
38.2 (1.504)  
• Faster Switching  
• Lower Leakage  
• 100% Avalanche Tested  
* Source terminals are shorted  
internally. Current handling  
capability is equal for  
S
either Source terminal.  
• Popular SOT–227 Package  
D
S
StarMOS is a new generation of high voltage  
N–Channel enhancement mode power MOSFETs.  
This new technology minimises the JFET effect,  
increases packing density and reduces the  
on-resistance. StarMOS also achieves faster  
switching speeds through optimised gate layout.  
G
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
Drain – Source Voltage  
500  
50  
V
A
A
V
DSS  
Continuous Drain Current  
I
I
D
1
Pulsed Drain Current  
200  
DM  
Gate – Source Voltage  
±20  
V
V
GS  
V
Gate – Source Voltage Transient  
±30  
GSM  
Total Power Dissipation @ T  
Derate Linearly  
= 25°C  
500  
W
case  
P
D
4
W/°C  
Operating and Storage Junction Temperature Range  
Lead Temperature : 0.063” from Case for 10 Sec.  
–55 to 150  
300  
T , T  
J
STG  
°C  
A
T
L
1
Avalanche Current (Repetitive and Non-Repetitive)  
30  
I
AR  
1
Repetitive Avalanche Energy  
30  
E
E
AR  
AS  
mJ  
2
Single Pulse Avalanche Energy  
1300  
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.  
2) Starting T = 25°C, L = 2.89mH, R = 25, Peak I = 30A  
J
G
L
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
5/99  

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