Datasheet > SMG1330N

SMG1330N

更新时间： 2024-11-05 09:19:07

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	62K
描述
2.0A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode MOSFET

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SMG1330N 数据手册

SMG1330N

2.0A , 30V , R_DS(ON)58 mΩ

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

SC-59

DESCRIPTION

These miniature surface mount MOSFETs

utilize a high cell density trench process to provide low

R_DS(ON)and to ensure minimal power loss and heat dissipation.

Top View

C B

FEATURES

ꢀ

Low R_DS(on)provides higher efficiency and extends battery life.

Low thermal impedance copper leadframe SC59 saves board space.

Fast switching speed.

High performance trench technology.

Millimeter

Min. Max.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

APPLICATION

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

DC-DC converters and power management in

portable and battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless telephones.

0.10

0.20

0.45

0.55

1.70

0.35

2.30

0.50

0.85

1.15

TOP VIEW

PACKAGE INFORMATION

Package

MPQ

Leader Size

SC-59

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

2.0

Continuous Drain Current ¹

Pulsed Drain Current ²

I_D

1.7

I_DM

I_S

±20

Continuous Source Current (Diode Conduction) ¹

T_A=25°C

T_A=70°C

Operating Junction and Storage Temperature Range

1.6

0.34

0.22

-55~150

°C

Power Dissipation ¹

P_D

T_J, T_STG

Thermal Resistance Ratings

t ≦ 5 sec

100

166

Maximum Junction to Ambient ¹

Notes:

R_θ

°C / W

Steady State

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

29-Aug-2011 Rev. A

Page 1 of 2

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