Datasheet > SMG1333

SMG1333

更新时间： 2024-11-06 06:12:39

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	348K
描述
P-Channel Enhancement Mode Power Mos.FET

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SMG1333 数据手册

SMG1333

-550mA, -20V,RDS(ON) 800m

Elektronische Bauelemente

P-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

SC-59

Min

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

Description

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

The SMG1333 provide the designer with the best

combination of fast switching, low on-resistance

and cost-effectiveness.

Top View

Features

* Simple Gate Drive

* Small package outline

* Fast switching speed

Drain

Gate

All Dimension in mm

Applications

Source

* Power Management in Notebook Computer

* Protable Equipment

* Battery Powered System

Marking : 1333

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

-20

±12

-550

-440

-2.5

Sate-Source Voltage

VGS

Continuous Drain Current ³

Pulsed Drain Current^1,2

Total Power Dissipation

ID@TA=25 ^o

ID@TA=70 ^oC

IDM

PD@TA=25 ^o

0.008

W/^oC

^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

^oC /W

Thermal Resistance Junction-ambient³

Rthj-a

125

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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