Datasheet > SMG1332E

SMG1332E

更新时间： 2024-11-06 06:12:39

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	723K
描述
N-Channel Enhancement Mode Power Mos.FET

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中文翻译

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SMG1332E 数据手册

SMG1332E

600mA, 20V,RDS(ON)600m

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

SC-59

Min

Description

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

The SMG1332E provide the designer with best

combination of fast swirching, low on-resistance

and cost-effectiveness.

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

Top View

Features

* Simple Gate Drive

* 2KV ESD Rating (Per MIL-STD-883D)

* Small Package Outline

Drain

Gate

All Dimension in mm

Source

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

±5

Gate-Source Voltage

VGS

Continuous Drain Current³

Pulsed Drain Current^1,2

ID@TA=25^oC

600

^oC

I^D@TA=70

470

2.5

I^DM

Total Power Dissipation

PD@TA=25^o

1.0

0.008

-55~+150

W/ ^oC

^oC

Linear Derating Factor

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient ³

125

C /W

Rthj-a

Max.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jan-2006 Rev. B

Page 1 of 4

12 3 4

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