Datasheet > SMDJ-65609EV-35SB/SC

SMDJ-65609EV-35SB/SC

更新时间： 2024-11-15 05:33:23

品牌	Logo	应用领域
TEMIC		静态存储器
页数	文件大小	规格书
9页	60K
描述
Standard SRAM, 128KX8, 35ns, CMOS, CDFP32,

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M65609E

128 K ꢀ 8 Very Low Power CMOS SRAM Rad Tolerant

Introduction

The M65609E is a very low power CMOS static RAM

organized as 131072 × 8 bits.

access time at 35 ns over the full military temperature

range. The high stability of the 6T cell provides

excellent protection against soft errors due to noise.

Atmel Wireless & Microcontrollers brings the solution

to applications where fast computing is as mandatory as

low consumption, such as aerospace electronics,

portable instruments, or embarked systems.

The M65609E is processed according to the methods of

the latest revision of the MIL STD 883 (class B or S),

ESA SCC 9000 or QML.

Utilizing an array of six transistors (6T) memory cells,

the M65609E combines an extremely low standby

supply current (Typical value = 20 µA) with a fast

It is produced on the same process as the MH1RT sea of

gates series.

Features

D Operating voltage: 3.3 V

D Access time: 35, 70 ns

D 400 Mils width package

D TTL compatible inputs and outputs

D Asynchronous

D Very low power consumption

active : 200 mW (Max)

D Designed on 0.35 micron process

D Latch up immune

standby : 70 µW (Typ)

data retention: 50 µW (typ)

D Wide temperature Range : –55 To +125°C

D 200 Krads capability

D SEU LET better than 3 MeV

Interface

Block Diagram

Rev. B – February 5, 2001

Preliminary

12 3 4 5 6 7...9

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