Datasheet > SMDJ-65609EV-40SB

SMDJ-65609EV-40SB

更新时间： 2024-11-15 03:41:59

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SMDJ-65609EV-40SB 数据手册

Features

• Operating voltage: 3.3V

• Access time: 40ns

• Very low power consumption

– active: 180mW (Max)

– standby: 70µW (Typ)

• Wide temperature Range: -55°C to +125°C

• 400 Mils width package

• TTL compatible inputs and outputs

• Asynchronous

• Designed on 0.35 micron process

• Latch up immune

• 200Krads capability

• SEU LET better than 3MeV

Rad Hard

3.3V 128 K x 8

Very Low Power

CMOS SRAM

Description

The M65609E is a very low power CMOS static RAM organized as 131072 x 8bits.

Atmel Wireless & Microcontrollers brings the solution to applications where fast com-

puting is as mandatory as low consumption, such as aerospace electronics, portable

instruments, or embarked systems.

Utilizing an array of six transistors (6T) memory cells, the M65609E combines an

extremely low standby supply current (Typical value= 20µA) with a fast access time at

40ns over the full military temperature range. The high stability of the 6T cell provides

excellent protection against soft errors due to noise.

M65609E

The M65609E is processed according to the methods of the latest revision of the MIL

STD 883 (class B or S), ESA SCC 9000 or QML.

It is produced on the same process as the MH1RT sea of gates series.

Rev C.–20-Aug-01

12 3 4 5 6 7...11

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