Features
• Operating voltage: 3.3V
• Access time: 40ns
• Very low power consumption
– active: 180mW (Max)
– standby: 70µW (Typ)
• Wide temperature Range: -55°C to +125°C
• 400 Mils width package
• TTL compatible inputs and outputs
• Asynchronous
• Designed on 0.35 micron process
• Latch up immune
• 200Krads capability
• SEU LET better than 3MeV
Rad Hard
3.3V 128 K x 8
Very Low Power
CMOS SRAM
Description
The M65609E is a very low power CMOS static RAM organized as 131072 x 8bits.
Atmel Wireless & Microcontrollers brings the solution to applications where fast com-
puting is as mandatory as low consumption, such as aerospace electronics, portable
instruments, or embarked systems.
Utilizing an array of six transistors (6T) memory cells, the M65609E combines an
extremely low standby supply current (Typical value= 20µA) with a fast access time at
40ns over the full military temperature range. The high stability of the 6T cell provides
excellent protection against soft errors due to noise.
M65609E
The M65609E is processed according to the methods of the latest revision of the MIL
STD 883 (class B or S), ESA SCC 9000 or QML.
It is produced on the same process as the MH1RT sea of gates series.
Rev C.–20-Aug-01
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