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SMBJ60A-H PDF预览

SMBJ60A-H

更新时间: 2024-11-28 02:49:39
品牌 Logo 应用领域
音特电子 - YINT 电视
页数 文件大小 规格书
5页 1104K
描述
Automotive and High Reliability TVS Diodes

SMBJ60A-H 数据手册

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Automotive and High Reliability TVS Diodes  
Surface Mount – 600W > SMBJ - H Series  
Trustworthy electronic circuit protection expert  
SMBJ-H Series  
General Information  
The SMB-H series is designed to protect voltage sensitive components from  
high voltage, high energy transients. They have excellent clamping capability, high  
surge capability, low zener impedance and fast response time. The SMB-H series is  
supplied in YINT Semiconductor’s exclusive, cost-effective, highly reliable and is  
ideally suited for use in communication systems, automotive, numerical controls,  
process controls, medical equipment, business machines, power supplies and many  
other industrial/consumer Applications.  
Molded plastic  
glass passivated junction.  
Features  
Applications  
Case: DO-214AA/SMB  
TVS devices are ideal for the  
protection of I/O Interfaces, VCC bus  
and other vulnerable circuits used in  
Telecom, Computer, Industrial and  
Consumer electronic applications.  
For surface mounted applications in order to optimize board space.  
Polarity: Color band denoted positive end (cathode) except Bidirectional.  
Typical failure mode is short from over-specified voltage or current  
High Temperature soldering:260°C/10 seconds at terminals.  
Terminal: Solder plated, solderable per MIL-STD-750,Method 2026.  
Electrical Characteristics (@ TA = 25Unless Otherwise Noted)  
Parameter  
Symbol  
Value  
Unit  
Minimum Peak Pulse Power Dissipation (T = 1 ms) (note1 note 2)  
PPK  
600  
Watts  
Peak Forward Surge Current  
8.3 ms Single Half Sine Wave Superimposed on Rated Load  
(JEDEC Method) (Note 3)  
IFSM  
100  
Amps  
Steady State Power Dissipation @ TL = 75 °C  
PM(AV)  
VF  
5.0  
Watts  
Volts  
Maximum Instantaneous Forward Voltage @ I PP = 50 A  
(For Unidirectional Units Only)(note4 note 5)  
3.5/5  
Operating Temperature Range  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
Storage Temperature Range  
NOTES:  
TSTG  
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.  
2. Thermal Resistance Junction to Lead.  
3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).  
4. Single Phase, Half Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.  
5. VF<3.5V for VBR< 200V and VF <5.0V for VBR> 201V.  
www.yint.com.cn  
Rev:19.3  
1

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