Datasheet > SMBJ200A

SMBJ200A

更新时间： 2024-09-15 14:43:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
8页	1080K
描述
SMBG

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中文翻译

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数据手册

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SMBJ200A 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SMBG Plastic-Encapsulate Diodes

Transient Voltage Suppressor Diodes

SMBJ SERIES

Features

SMBG

●

P_PP

600W

5.0V- 440V

● V_RWM

●

Glass passivated chip

Applications

●

Clamping Voltage

Marking

● SMBJ

Bi-directional

Uni-direction

XX(C/A/CA)

From 5.0 To 440

Max

Conditions

Item

Symbol

Unit

P_PPM

Peak pulse power dissipation

Peak pulse current(1)

Power dissipation

600

with a 10/1000us waveform

I_PPM

See Next Table

P_D

5.0

On infinite heat sink at T_L=75℃

I_FSM

8.3 ms single half sine-wave unidirectional only

100

Peak forward surge current(2)

Operating junction and

storage temperature range

T_J,T_STG

℃

-55 to +150

（T =25℃ Unless otherwise specified）

Electrical Characteristics

Item

Symbol

Max

Unit

Conditions

at 50A for unidirectional only

junction to lead

Maximum instantaneous forward

Voltage (3)

V_F

3.5/5.0

R_θJL

R_θJA

℃/W

Thermal resistance

junction to ambient， L_Lead= 10 mm

100

Notes:

(1)

(2)

(3)

Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25℃per Fig.2.

Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V

www.jscj-elec.com

Rev. - 1.0

12 3 4 5 6 7 8

中文翻译

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