是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | DO-214AC | 包装说明: | R-PDSO-C2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.48 | Is Samacsys: | N |
最大击穿电压: | 220 V | 最小击穿电压: | 180 V |
击穿电压标称值: | 200 V | 最大钳位电压: | 287 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-214AC |
JESD-30 代码: | R-PDSO-C2 | 最大非重复峰值反向功率耗散: | 400 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 最大功率耗散: | 1.52 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 162 V |
子类别: | Transient Suppressors | 表面贴装: | YES |
技术: | AVALANCHE | 端子形式: | C BEND |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMAJP4KE200CE3TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 400W, 162V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
SMAJP4KE200CTR | MICROSEMI |
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Trans Voltage Suppressor Diode, 400W, 162V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
SMAJP4KE200E3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 400W, 162V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
SMAJP4KE200E3TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 400W, 162V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
SMAJP4KE200-TP | MCC |
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Trans Voltage Suppressor Diode | |
SMAJP4KE20A | MICROSEMI |
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Trans Voltage Suppressor Diode, 400W, 17.1V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
SMAJP4KE20A | MCC |
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Transient Voltage Suppressor 6.8 to 550 Volts 400 Watt | |
SMAJP4KE20AE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 400W, 17.1V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
SMAJP4KE20AE3TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 400W, 17.1V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
SMAJP4KE20AHE3 | MCC |
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Tape: 5K/Reel, 80K/Ctn; |