5秒后页面跳转
SMAJP4KE200CE3 PDF预览

SMAJP4KE200CE3

更新时间: 2024-11-19 13:34:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
4页 315K
描述
Trans Voltage Suppressor Diode, 400W, 162V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, PLASTIC, DO-214BA, SMAJ, 2 PIN

SMAJP4KE200CE3 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:DO-214AC包装说明:R-PDSO-C2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.48Is Samacsys:N
最大击穿电压:220 V最小击穿电压:180 V
击穿电压标称值:200 V最大钳位电压:287 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2最大非重复峰值反向功率耗散:400 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL最大功率耗散:1.52 W
认证状态:Not Qualified最大重复峰值反向电压:162 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SMAJP4KE200CE3 数据手册

 浏览型号SMAJP4KE200CE3的Datasheet PDF文件第2页浏览型号SMAJP4KE200CE3的Datasheet PDF文件第3页浏览型号SMAJP4KE200CE3的Datasheet PDF文件第4页 
SMAJP4KE6.8 thru SMAJP4KE400CA, e3  
TRANSIENT VOLTAGE SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
PACKAGE  
This Transient Voltage Suppressor (TVS) series is an economical molded  
surface mount package with very low thermal resistance due to its unique  
axial subassembly. It is used for automotive applications and others to  
protect voltage sensitive components from destructive or partial degradation.  
They have a peak pulse power rating of 400 watts for 1 ms as depicted in  
Figures 1 and 2. The package is configured for easy pick and place onto PC  
Boards for automated handling. The J-bend terminations also provide stress  
relief for use on a variety of PC Board materials.  
DO-214AC or BA  
(SMAJ)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Economical series for surface mounting  
Suppresses transient up to 400 watts @ 10/1000  
μs (see Figure 1)  
Protects sensitive components such as IC’s,  
CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Available in both unidirectional and bi-directional (add  
C or CA suffix to part number for bidirectional)  
Voltages from 6.8 to 400 V Breakdown (VBR  
Fast Response  
)
Protection from switching transients & induced RF  
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively  
Moisture classification is Level 1 per IPC/JEDEC  
J-STD-020B with no dry pack  
Secondary lightning protection per IEC61000-4-5  
with 42 Ohms source impedance:  
Class 1: SMAJP4KE6.8 to SMAJP4KE91A or CA  
Class 2: SMAJP4KE6.8 to SMAJP4KE47A or CA  
Class 3: SMAJP4KE6.8 to SMAJP4KE24A or CA  
Class 4: SMAJP4KE6.8 to SMAJP4KE12A or CA  
Optional 100% screening for avionics grade is  
available by adding MA prefix to part number for  
added 100% temperature cycle -55oC to +125oC  
(10X) as well as surge (3X) and 24 hours HTRB with  
post test VZ & IR (in the operating direction for  
unidirectional or both directions for bidirectional)  
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, or JANTXV are available by  
adding MQ, MX, or MV prefixes respectively to part  
numbers  
Secondary lightning protection per IEC61000-4-5  
with 12 Ohms source impedance:  
Class 1: SMAJP4KE6.8 to SMAJP4KE30A or CA  
Class 2: SMAJP4KE6.8 to SMAJP4KE15A or CA  
RoHS Compliant devices available by adding “e3” suffix  
NOTE: Equivalent axial-leaded packages available  
as P4KE6.8 to P4KE400CA  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Peak Pulse Power dissipation at 25ºC: 400 watts at  
CASE: Molded epoxy package meets UL94V-0  
10/1000 μs (also see Fig 1,2, and 4)  
TERMINALS: Tin-lead or RoHS compliant  
annealed matte-Tin plating solderable per MIL-  
STD-750, method 2026  
Impulse repetition rate (duty factor): 0.01%  
t
clamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
POLARITY: Cathode designated by cathode band  
for unidirectional (none for bidirectional)  
Operating and Storage temperature: -65ºC to +150ºC  
Thermal resistance: 17 ºC/W junction to lead or  
82ºC/W junction to ambient when mounted on FR4  
PC board (1 oz Cu) with recommended footprint (see  
last page)  
Steady-State Power dissipation: 5 watts at TL = 65oC  
or 1.52 watts at TA = 25ºC when mounted on FR4 PC  
board with recommended footprint  
Marking only shows 4KExxx digits of part number  
(e.g. 4KE6.8, 4KE12CA, 4KE30A, etc.)  
Weight: 0.1 grams (approximate)  
Tape & Reel option: Standard per EIA-481-1-A  
with 12 mm tape (add “TR” suffix to part number)  
750 per 7 inch reel or 2500 per 13 inch reel  
Forward Surge Current at 25ºC: 40 amps peak, 8.3  
ms half-sine wave. Maximum voltage of 3.50 V  
(unidirectional only)  
Solder temperatures: 260 ºC for 10 s (maximum)  
Copyright © 2007  
6-20-2007 REV D  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

与SMAJP4KE200CE3相关器件

型号 品牌 获取价格 描述 数据表
SMAJP4KE200CE3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 162V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMAJP4KE200CTR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 162V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMAJP4KE200E3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 162V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMAJP4KE200E3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 162V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMAJP4KE200-TP MCC

获取价格

Trans Voltage Suppressor Diode
SMAJP4KE20A MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 17.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMAJP4KE20A MCC

获取价格

Transient Voltage Suppressor 6.8 to 550 Volts 400 Watt
SMAJP4KE20AE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 17.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMAJP4KE20AE3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 17.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMAJP4KE20AHE3 MCC

获取价格

Tape: 5K/Reel, 80K/Ctn;