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SMAJP4KE20AP PDF预览

SMAJP4KE20AP

更新时间: 2024-11-23 13:13:35
品牌 Logo 应用领域
美微科 - MCC 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
5页 293K
描述
Trans Voltage Suppressor Diode, 400W, 17.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMAJ, 2 PIN

SMAJP4KE20AP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.35
其他特性:UL RECOGNIZED最大击穿电压:21 V
最小击穿电压:19 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3最大非重复峰值反向功率耗散:400 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:17.1 V表面贴装:YES
技术:AVALANCHE端子面层:MATTE TIN
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

SMAJP4KE20AP 数据手册

 浏览型号SMAJP4KE20AP的Datasheet PDF文件第2页浏览型号SMAJP4KE20AP的Datasheet PDF文件第3页浏览型号SMAJP4KE20AP的Datasheet PDF文件第4页浏览型号SMAJP4KE20AP的Datasheet PDF文件第5页 
SMAJP4KE6.8(C)A  
THRU  
SMAJP4KE550(C)A  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
For surface mount applicationsin in order to optimize  
Transient  
Voltage Suppressor  
6.8 to 550 Volts  
boar d space  
Low profile package  
Fast response time: typical less than 1.0ps from 0 volts to  
400 Watt  
VBR minimum  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
·
·
DO-214AC  
UL Recognized File # E331408  
(SMAJ)(LEAD FRAME)  
H
Mechanical Data  
CASE: JEDEC DO-214AC  
J
Terminals: solderable per MIL-STD-750, Method 2026  
Polarity: Color band denotespositive end (cathode)  
except Bidirectional  
Maximum soldering temperature: 250oC for 10 seconds  
A
C
Maximum Ratings @ 25oC Unless Otherwise Specified  
E
D
B
F
Peak Pulse Current on  
10/1000us waveform  
IPP  
See Table 1 Note: 1  
G
Peak Pulse Power  
PPP  
400W  
40A  
Note: 1,  
Note: 3  
DIMENSIONS  
Dissipation  
INCHES  
MIN  
.079  
.050  
.002  
---  
MM  
MIN  
2.00  
1.27  
.05  
DIM  
A
MAX  
MAX  
2.44  
1.63  
.20  
NOTE  
Peak Forward Surge  
Current  
IFSM)  
.096  
.064  
.008  
.02  
B
C
D
E
---  
.51  
-55oC to  
+150oC  
.030  
.065  
.189  
.157  
.090  
.060  
.091  
.220  
.181  
.115  
.76  
1.52  
2.32  
5.59  
4.60  
2.92  
Operation And Storage TJ, TSTG  
Temperature Range  
F
1.65  
4.80  
4.00  
2.25  
G
H
J
SUGGESTED SOLDER  
PAD LAYOUT  
0.090”  
MAX  
0.058 ”  
MIN  
NOTES:  
1. Non-repetitive current pulse, per Fig.3 and derated above  
TA=25oC per Fig.2.  
2. Mounted on 5.0mm2 copper pads to each terminal.  
3. 8.3ms, single half sine wave duty cycle=4 pulses per. Minute  
maximum.  
0.070"  
MIN  
www.mccsemi.com  
1 of 5  
Revision: B  
2011/09/16  

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