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SMAJP4KE22 PDF预览

SMAJP4KE22

更新时间: 2024-01-13 22:28:41
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
4页 331K
描述
Transient Voltage Suppressor

SMAJP4KE22 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:DO-214BA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.48
Is Samacsys:N最大击穿电压:24.2 V
最小击穿电压:19.8 V击穿电压标称值:22 V
最大钳位电压:31.9 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大功率耗散:1.52 W认证状态:Not Qualified
最大重复峰值反向电压:17.8 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:TIN LEAD端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SMAJP4KE22 数据手册

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SMAJP4KE6.8 thru SMAJP4KE400CA  
Transient Voltage Suppressor  
Breakdown Voltage 6.8 to 400 Volts  
Peak Pulse Power  
400 Watts  
Features  
Breakdown Voltages (VBR)from 6.8 to 400V  
CASE: SMA (DO214AC)  
400W peak pulse power capability with a 10/1000μs  
waveform, repetitive rate (duty cycle):0.01%  
Fast Response Time  
Low incremental surge resistance  
Excellent clamping capability  
Available in uni-directional and bi-direcona
High temperature soldering guaranteed10  
seconds, 0.375” (9.5mm) lead length5ls. g)  
tension  
Application  
Use isensitive electronics protectioagainst vltage  
transies induced by inductive load witchng and  
lighting oICS, MOSFE, signal lines of sensor units for  
consumercoputer, industrial, automotive and  
telecommuicaton  
MechanicaDaa  
Case: Voi-free transfer molded thermosetting epoxy  
body meeting UL94V-O  
Terminals: Tin-Lead or ROHS Compliant annealed  
matte-Tin plating readily solderable per MIL-STD-750,  
Method 2026  
Marking: Body marked with part number  
Polarity: Cathode indicated by band. No marking on bi-  
directional devices  
Dimenons in inches nd (millimeters)  
Weight: 0.053gApproximately)  
Maximum Ratings ad Electrical Characteristics @ 25OC unless otherwise specified  
Conditions  
Symbol  
Value  
400  
Unit  
W
PPPM  
eak pulse power capability with a 10/1000μs  
Peak pulse current with a 10/1000μs  
IPPM  
SEE TABLE1  
5.0  
A
Steady state power dissipation at TL=65,Lead lengths 0.375”(10mm)  
W
PM(AV)  
Steady state power dissipation at TA=25when mounted on FR4 PC  
described for thermal resistance  
1.52  
W
IFSM  
VF  
Peak forward surge current,8.3ms single half sine-wave unidirectional only⑴  
Maximum instantaneous forward voltage at 30A for unidirectional only⑵  
Thermal resistance junction to lead  
40  
3.5/5.0  
17  
A
V
RθJL  
/W  
/W  
RθJA  
Thermal resistance junction to ambient  
82  
TJ, TSTG  
Operating and Storage Temperature  
-65 to +150  
Notes:  
Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum  
VF=3.5V for SMAJP4KE220(A) and below; VF=5.0V for SMAJP4KE250(A) and above  
Document Number: SMAJP4KE6.8 thru SMAJP4KE400CA  
Feb.29, 2012  
www.smsemi.com  
1

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