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SM6T12 PDF预览

SM6T12

更新时间: 2024-11-04 13:00:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管
页数 文件大小 规格书
5页 188K
描述
600W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2

SM6T12 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.19Is Samacsys:N
其他特性:UL RECOGNIZED最大击穿电压:13.2 V
最小击穿电压:11.4 V击穿电压标称值:12 V
最大钳位电压:21.7 V配置:SINGLE
最小二极管电容:2300 pF二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:4 W
认证状态:Not Qualified最大重复峰值反向电压:9.7 V
最大反向电流:5 µA子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SM6T12 数据手册

 浏览型号SM6T12的Datasheet PDF文件第2页浏览型号SM6T12的Datasheet PDF文件第3页浏览型号SM6T12的Datasheet PDF文件第4页浏览型号SM6T12的Datasheet PDF文件第5页 
SM6T6V8A/220A  
®
SM6T6V8CA/220CA  
TRANSILTM  
FEATURES  
PEAK PULSE POWER : 600 W (10/1000µs)  
BREAKDOWN VOLTAGE RANGE :  
From 6.8V to 220 V.  
UNI AND BIDIRECTIONAL TYPES  
LOW CLAMPING FACTOR  
FAST RESPONSE TIME  
UL RECOGNIZED  
DESCRIPTION  
SMB  
(JEDEC D0-214AA)  
Transil diodes provide high overvoltage protection  
by clamping action. Their instantaneous response  
to transient overvoltages makes them particu-  
larly suited to protect voltage sensitive devices  
such as MOS Technology and low voltage sup-  
plied IC’s.  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)  
Symbol  
PPP  
Parameter  
Peak pulse power dissipation (see note 1)  
Power dissipation on infinite heatsink  
Value  
600  
5
Unit  
W
Tj initial = Tamb  
amb = 50°C  
P
T
W
IFSM  
Non repetitive surge peak forward  
current for unidirectional types  
tp = 10ms  
Tj initial = Tamb  
100  
A
Tstg  
Tj  
Storage temperature range  
Maximum junction temperature  
- 65 to + 175  
150  
°C  
°C  
TL  
Maximum lead temperature for soldering during 10 s.  
260  
°C  
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Rth (j-l)  
Parameter  
Value  
20  
Unit  
°C/W  
°C/W  
Junction to leads  
Rth (j-a)  
Junction to ambient on printed circuit on recommended pad  
layout  
100  
August 2001- Ed: 5A  
1/5  

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