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SM6T12A-E3/51 PDF预览

SM6T12A-E3/51

更新时间: 2024-11-27 09:15:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 97K
描述
Trans Voltage Suppressor Diode, 600W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

SM6T12A-E3/51 数据手册

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SM6T Series  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• 600 W peak pulse power capability with a  
10/1000 µs waveform  
• Available in Unidirectional and Bidirectional  
• Excellent clamping capability  
• Low inductance  
DO-214AA (SMB)  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 260 °C  
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
MAJOR RATINGS AND CHARACTERISTICS  
TYPICAL APPLICATIONS  
V(BR)  
6.8 V to 220 V  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
PPPM  
600 W  
PD  
5.0 W  
IFSM (Unidirectional only)  
Tj max.  
100 A  
150 °C  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
DEVICES FOR BIDIRECTION APPLICATIONS  
For bidirectional devices use CA suffix (e.g.  
SM6T12CA).  
Electrical characteristics apply in both directions.  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: For unidirectional types the band denotes  
cathode end, no marking on bidirectional types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
Minimum 600  
see next table  
5.0  
UNIT  
W
Peak pulse power dissipation on 10/1000 µs waveform (1,2) (Fig. 1)  
Peak power pulse current with a 10/1000 µs waveform (1) (Fig. 3)  
Power dissipation on infinite heatsink TA = 50 °C  
A
PD  
W
Peak forward surge current 10 ms single half sine-wave uni-directional only (2)  
IFSM  
100  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to +150  
°C  
Note:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal  
Document Number 88385  
08-Sep-06  
www.vishay.com  
1

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