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SM6T12A-HE3/52 PDF预览

SM6T12A-HE3/52

更新时间: 2024-11-27 05:09:27
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
5页 97K
描述
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Transient Suppressor

SM6T12A-HE3/52 数据手册

 浏览型号SM6T12A-HE3/52的Datasheet PDF文件第2页浏览型号SM6T12A-HE3/52的Datasheet PDF文件第3页浏览型号SM6T12A-HE3/52的Datasheet PDF文件第4页浏览型号SM6T12A-HE3/52的Datasheet PDF文件第5页 
SM6T Series  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• 600 W peak pulse power capability with a  
10/1000 µs waveform  
• Available inuni-directional and bi-directional  
• Excellent clamping capability  
• Low inductance  
• Meets MSL level 1, per J-STD-020, LF maximum  
DO-214AA (SMB)  
peak of 260 °C  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
PRIMARY CHARACTERISTICS  
VBR  
6.8 V to 220 V  
PPPM  
600 W  
PD  
5.0 W  
I
FSM (uni-directional only)  
TJ max.  
100 A  
150 °C  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC Q101 qualified)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g.  
SM6T12CA).  
Electrical characteristics apply in both directions.  
E3 suffix meets JESD 201 class 1A whisker test, HE3  
suffix meets JESD 201 class 2 whisker test  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
600  
UNIT  
W
Peak pulse power dissipation on 10/1000 µs waveform (1)(2) (Fig. 1)  
Peak power pulse current with a 10/1000 µs waveform (1) (Fig. 3)  
Power dissipation on infinite heatsink TA = 50 °C  
See next table  
5.0  
A
PD  
W
Peak forward surge current 10 ms single half sine-wave uni-directional only (2)  
IFSM  
100  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to +150  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal  
Document Number: 88385  
Revision: 21-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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