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SM6T12A-E3

更新时间： 2024-09-08 13:49:07
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
5页 90K
描述
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient Suppressor

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SM6T12A-E3 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：DO-214AA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.68
Is Samacsys：N其他特性：EXCELLENT CLAMPING CAPABILITY
最大击穿电压：12.6 V最小击穿电压：11.4 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：5 W
认证状态：Not Qualified最大重复峰值反向电压：10.2 V
表面贴装：YES技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：30
Base Number Matches：1

SM6T12A-E3 数据手册

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New Product  
SM6T Series  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB Transient Voltage Supressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 600 W peak pulse power capability with a 10/1000 μs  
waveform, repetitive rate (duty cycle): 0.01 %  
• Excellent clamping capability  
• Low inductance  
DO-214AA (SMB)  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
• Halogen-free according to IEC 61249-2-21 definition  
PRIMARY CHARACTERISTICS  
VBR  
6.8 V to 220 V  
TYPICAL APPLCIATIONS  
PPPM  
600 W  
5.0 W  
100 A  
150 °C  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
PD  
IFSM (uni-directional only)  
TJ max.  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3  
commercial grade  
- halogen-free, RoHS compliant, and  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. SM6T12CA).  
Electrical characteristics apply in both directions.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
600  
UNIT  
W
(1)(2)  
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)  
Peak power pulse current with a 10/1000 μs waveform (fig. 3)  
Power dissipation on infinite heatsink TA = 50 °C  
PPPM  
(1)  
IPPM  
See next table  
5.0  
A
PD  
W
(2)  
Peak forward surge current 10 ms single half sine-wave uni-directional only  
Operating junction and storage temperature range  
IFSM  
100  
A
TJ, TSTG  
- 65 to + 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Document Number: 89425  
Revision: 20-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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