Datasheet > SLD850U

SLD850U

更新时间： 2024-10-15 18:10:07

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	1159K
描述
TO-252

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SLD850U 数据手册

SLD850U

500V N-Channel MOSFET

General Description

Features

- N-Channel:500V 9A

This Power MOSFET is produced using Msemitek‘s

advanced planar stripe DMOS technology.

R_DS(on)Typ=0.84Ω@V_GS= 10 V

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

- Very Low On-resistance R_DS(ON)

- Low Crss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

D-PAK

SLD850U

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLD850U

Units

Drain-Source Voltage

500

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

5.4

(Note 1)

I_DM

V_GSS

E_AS

Drain Current

- Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

324

P_D

R _θJC

T_J, T_STG

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

2.8

℃/W

℃

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.3 Oct. 2022

12 3 4 5 6 7...9

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