Datasheet > SLD8S40A

SLD8S40A

更新时间： 2024-11-25 21:09:27

品牌	Logo	应用领域
力特 - LITTELFUSE		二极管
页数	文件大小	规格书
6页	745K
描述
Trans Voltage Suppressor Diode,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SLD8S40A 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	1.78
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SLD8S40A 数据手册

TVS Diodes

Surface Mount – SLD8S series

Pb e3

RoHS

SLD8S Series

Description

The SLD8S SeriesTVS Diode is housed in a SMTO-263

package with lead modiﬁcations. It is designed to protect

sensitive electronics against lightning and inductive load

switching voltage transient events for severe Automotive

Load Dump applications.

Features

• AEC-Q101 qualiﬁed

capability

• SMTO-263 package, and

foot print is compatible to

industrial popular DO-

218AB package

• Meet ISO7637-2 5a/5b

protection and ISO16750

load dump test (refer to

APP note for details)

• Low incremental surge

resistance

• UL Recognized compound

meeting ﬂammability

rating V-0

• Meets MSL level 1, per

J-STD-020, LF maximun

peak of 260°C

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E230531

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value is

0.1%

• Glass passivated chip

junction in modiﬁedTO-

263 package

• ESD protection of data

lines in accordance with

IEC 61000-4-2, 30kV(Air),

30kV(Contact)

• EFT protection of data

lines in accordance with

IEC 61000-4-4

• For surface mounted

applications to optimize

board space

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

• Low proﬁle package

• High temperature

to reﬂow soldering

guaranteed: 260°C/10sec

at terminals

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is Pb-

free and the terminal ﬁnish

material is tin (Sn) (IPC/

JEDEC J-STD-609A.01)

Parameter

Symbol

P_PPM

Value

2200

Unit

Peak Pulse Power Dissipation

1. 10ms x 150ms test waveform

2. 10/1000 test waveform

7000

8.0

Power dissipation on inﬁnite

heatsink atT_C= 25 °C

P_D

V_F

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

only

1.8

Peak forward surge current 8.3m

single half sine-wave

I_FSM

1000

°C

• Fast response time:

typically less than 1.0ps

from 0 Volts to BV min

Operating Junction and Storage

Temperature Range

T_J, T_STG-55 to 175

• Excellent clamping

TypicalThermal Resistance Junction

to case

R_θJC

0.9

°C/W

Applications

Functional Diagram

Designed to protect sensitive electronics from:

Cathode

- Inductive Load Switching

- Alternator Load Dump

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 07/30/18

12 3 4 5 6

中文翻译

下载PDF

与SLD8S40A相关器件

型号	品牌	获取价格	描述	数据表
SLD8S43A	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode,
SLD8S45A	LITTELFUSE	获取价格	AUTO TVS SMTO HI-POWER
SLD8S48A	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode,
SLD8S51A	LITTELFUSE	获取价格	AUTO TVS SMTO HI-POWER
SLD8S57A	LITTELFUSE	获取价格	TVS DIODE 57V 92.7V SMTO-263
SLD8S60A	LITTELFUSE	获取价格	SLD8S系列采用SMTO-263封装，并对引线做了改进，旨在为敏感电子设备提供精准的过压
SLD8S64A	LITTELFUSE	获取价格	SLD8S系列采用SMTO-263封装，并对引线做了改进，旨在为敏感电子设备提供精准的过压
SLD8SxxA	LITTELFUSE	获取价格	The SLD8S Series is SMTO-263 packaged with leaded modification and is designed to provide
SLD90N02T	Maplesemi	获取价格	TO-252
SLD90N03T	Maplesemi	获取价格	TO-252

与SLD8S40A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

42
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

57

产品中心

服务支持

精选活动

关于我们

帮助中心

SLD8S40A

SLD8S40A 技术参数

SLD8S40A 数据手册

与SLD8S40A相关器件

与SLD8S40A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SLD8S40A

SLD8S40A 技术参数

SLD8S40A 数据手册

与SLD8S40A相关器件

与SLD8S40A相关文章

您还可以找

您在本页遇到什么问题？