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SLD8S17A PDF预览

SLD8S17A

更新时间: 2024-01-23 12:54:15
品牌 Logo 应用领域
力特 - LITTELFUSE 二极管
页数 文件大小 规格书
6页 745K
描述
Trans Voltage Suppressor Diode,

SLD8S17A 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.76
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码:e3
湿度敏感等级:1峰值回流温度(摄氏度):260
端子面层:Matte Tin (Sn)处于峰值回流温度下的最长时间:40
Base Number Matches:1

SLD8S17A 数据手册

 浏览型号SLD8S17A的Datasheet PDF文件第2页浏览型号SLD8S17A的Datasheet PDF文件第3页浏览型号SLD8S17A的Datasheet PDF文件第4页浏览型号SLD8S17A的Datasheet PDF文件第5页浏览型号SLD8S17A的Datasheet PDF文件第6页 
TVS Diodes  
Surface Mount – SLD8S series  
Pb e3  
RoHS  
SLD8S Series  
Description  
The SLD8S SeriesTVS Diode is housed in a SMTO-263  
package with lead modifications. It is designed to protect  
sensitive electronics against lightning and inductive load  
switching voltage transient events for severe Automotive  
Load Dump applications.  
Features  
• AEC-Q101 qualified  
capability  
• SMTO-263 package, and  
foot print is compatible to  
industrial popular DO-  
218AB package  
• Meet ISO7637-2 5a/5b  
protection and ISO16750  
load dump test (refer to  
APP note for details)  
• Low incremental surge  
resistance  
• UL Recognized compound  
meeting flammability  
rating V-0  
• Meets MSL level 1, per  
J-STD-020, LF maximun  
peak of 260°C  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E230531  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value is  
0.1%  
• Glass passivated chip  
junction in modifiedTO-  
263 package  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2, 30kV(Air),  
30kV(Contact)  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
• For surface mounted  
applications to optimize  
board space  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
• Low profile package  
• High temperature  
to reflow soldering  
guaranteed: 260°C/10sec  
at terminals  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
• Pb-free E3 means 2nd  
level interconnect is Pb-  
free and the terminal finish  
material is tin (Sn) (IPC/  
JEDEC J-STD-609A.01)  
Parameter  
Symbol  
PPPM  
Value  
2200  
Unit  
W
Peak Pulse Power Dissipation  
1. 10ms x 150ms test waveform  
2. 10/1000 test waveform  
7000  
8.0  
W
W
Power dissipation on infinite  
heatsink atTC = 25 °C  
PD  
VF  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
only  
1.8  
V
Peak forward surge current 8.3m  
single half sine-wave  
IFSM  
1000  
A
°C  
• Fast response time:  
typically less than 1.0ps  
from 0 Volts to BV min  
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -55 to 175  
• Excellent clamping  
TypicalThermal Resistance Junction  
to case  
RθJC  
0.9  
°C/W  
Applications  
Functional Diagram  
Designed to protect sensitive electronics from:  
Cathode  
- Inductive Load Switching  
- Alternator Load Dump  
Anode  
Uni-directional  
©2016 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 07/30/18  

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