Datasheet > SK50DGDL12T7ETE2s

SK50DGDL12T7ETE2s

更新时间： 2024-11-07 14:53:27

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
10页	1015K
描述
IGBT Modules SEMITOP E2 Solder (63x57x12)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SK50DGDL12T7ETE2s 数据手册

浏览型号SK50DGDL12T7ETE2s的Datasheet PDF文件第2页

浏览型号SK50DGDL12T7ETE2s的Datasheet PDF文件第3页

浏览型号SK50DGDL12T7ETE2s的Datasheet PDF文件第4页

浏览型号SK50DGDL12T7ETE2s的Datasheet PDF文件第5页

浏览型号SK50DGDL12T7ETE2s的Datasheet PDF文件第6页

SK50DGDL12T7ETE2s

Absolute Maximum Ratings

Symbol Conditions

Inverter - IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

100

-20 ... 20

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITOP^®E2 Solder

V_CC= 800 V

3-phase

t_psc

_GE≤ 15 V

T_j= 175 °C

µs

°C

_CES≤ 1200 V

Converter-Inverter-Brake

(CIB)

T_j

-40 ... 175

Chopper - IGBT

T_j= 25 °C

V_CES

I_C

1200

100

-20 ... 20

SK50DGDL12T7ETE2s

Features*

• Optimized design for superior thermal

performance

• Low inductive design

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

• Solder contact technology

• 1200V Generation 7 IGBT (T7)

• Robust and soft switching CAL4F

diode technology

• PEP rectifier diode technology for

enhanced power and environmental

robustness

• Integrated NTC temperature sensor

• UL recognized file no. E 63 532

V_CC= 800 V

_GE≤ 15 V

T_j= 175 °C

t_psc

µs

°C

_CES≤ 1200 V

T_j

-40 ... 175

Inverse - Diode

T_j= 25 °C

V_RRM

I_F

1200

100

170

-40 ... 175

°C

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

Typical Applications

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

• Motor drives

• Air conditioning

• Auxiliary Inverters

I_FRM

I_FSM

T_j

t_p= 10 ms, sin 180°, T_j= 150 °C

Remarks

• Recommended T_j,op= -40 ...+150 °C

• T_j,op> 150 °C during overload (details

on AN19-002)

Freewheeling - Diode

T_j= 25 °C

V_RRM

I_F

1200

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_FRM

I_FSM

T_j

-40 ... 175

°C

t_p= 10 ms, sin 180°, T_j= 150 °C

DGDL-ET

Rev. 1.0 – 16.12.2021

12 3 4 5 6 7...10

中文翻译

下载PDF

与SK50DGDL12T7ETE2s相关器件

型号	品牌	获取价格	描述	数据表
SK50DM060D	SEMIKRON	获取价格	Power Bipolar Transistor, 50A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin
SK50GAL065	SEMIKRON	获取价格	Fast IGBT Module
SK50GAL065_07	SEMIKRON	获取价格	IGBT Module
SK50GAL065DEC	SEMIKRON	获取价格	One Screw Mounting
SK50GAL067	SEMIKRON	获取价格	IGBT Module
SK50GAL067_07	SEMIKRON	获取价格	IGBT Module
SK50GAR065	SEMIKRON	获取价格	Fast IGBT Module
SK50GAR065_07	SEMIKRON	获取价格	Fast IGBT Module
SK50GAR065DEC	SEMIKRON	获取价格	IGBT Module
SK50GAR067	SEMIKRON	获取价格	IGBT Module