Datasheet > SK 151 GB 07F3 T

SK 151 GB 07F3 T

更新时间： 2023-12-06 20:11:15

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	598K
描述
IGBT Modules SEMITOP 3 (55x31x12)

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中文翻译

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数据手册

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SK 151 GB 07F3 T 数据手册

SK 151 GB 07F3 T

Characteristics

Symbol Conditions

Inverse - Diode

min.

typ.

max.

Unit

I_F= 20 A

T_j= 25 °C

V_F= V_EC

1.59

1.68

2.06

2.01

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_F0

0.99

0.80

1.10

0.89

mΩ

chiplevel

r_F

chiplevel

SEMITOP^®3

IGBT module

SK 151 GB 07F3 T

Features*

I_F= 20 A

I_RRM

Q_rr

di/dt_off= 3300 A/µs

µC

_GE= 15 V

_CC= 300 V

T_j= 150 °C

E_rr

0.2

per diode, λ_paste=0.8 W/(mK)

R_th(j-s)

2.46

K/W

Module

L_CE

M_s

to heatsink

2.25

2.5

Temperature Sensor

R₁₀₀

• Compact design

T_c=100°C (R₂₅=5 kΩ)

493 ± 5%

3550

±2%

• One screw mounting module

• Heat transfer and isolation through

direct copper bonded aluminium oxide

ceramic (DBC)

• 650V Fast Trench3 IGBT technology

• CAL diode technology

• Integrated NTC temperature sensor

• UL recognized, file no. E 63 532

B_100/125

R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)]; T[K];

Typical Applications

• Switching (not for linear use)

• Inverter

• Switched mode power supplies

• UPS

Remarks

Dynamic measurements set-up:

- IGBT switching on external 150A 600V

Ultrafast diode

- Diode switching on external 20A 600V

Trench3 IGBT

GB-T

Rev. 2.0 – 06.08.2021

123 4 5 6

中文翻译

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