Datasheet > SK 25 GH 12T4

SK 25 GH 12T4

更新时间： 2024-11-19 14:52:23

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	171K
描述
IGBT Modules SEMITOP 3 (55x31x12)

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中文翻译

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SK 25 GH 12T4 数据手册

SK 25 GH 12T4

Absolute Maximum Ratings

Symbol Conditions

Inverter - IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

T_s= 25 °C

T_s= 70 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3 x I_Cnom

-20 ... 20

SEMITOP^®3

IGBT module

SK 25 GH 12T4

Features

V_CC= 800 V

V_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

V_CES≤ 1200 V

T_j

-40 ... 175

Inverse - Diode

T_s= 25 °C

T_s= 70 °C

I_F

100

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 3 x I_Fnom

10 ms, sin 180°, T_j= 150 °C

ꢀ Compact design

-40 ... 175

°C

ꢀ One screw mounting

Module

I_t(RMS)

T_stg

ꢀ Heat transfer and isolation through

direct copper bonded aluminium oxide

ceramic (DCB)

°C

-40 ... 125

2500

ꢀ High short circuit capability

ꢀ Trench4 IGBT technology

ꢀ CAL4F diode technology

ꢀ V_CE,satwith positive coefficient

V_isol

AC, sinusoidal, t = 1 min

Characteristics

Symbol Conditions

Inverter - IGBT

min.

typ.

max.

Unit

Typical Applications*

ꢀ Inverter

I_C= 25 A

T_j= 25 °C

V_CE(sat)

1.85

2.25

2.10

2.45

ꢀ Motor drive

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.8

0.7

42.0

62.0

5.8

0.9

0.8

48.0

66.0

6.5

m



chiplevel

V_GE= 15 V

V_GE= V_CE, I_C= 0.85 mA

T_j= 25 °C

V_GE(th)

I_CES

V_GE= 0 V

_CE= 1200 V

f = 1 MHz

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

E_on

t_d(off)

t_f

E_off

R_th(j-s)

1.43

0.115

0.085

142

0.00

19.5

2.27

288

77.5

2.7

V_CE= 25 V

_GE= 0 V

- 8 V...+ 15 V

T_j= 25 °C

V_CC= 600 V

T_j= 150 °C

_C= 25 A

_{G on}= 19 

_{G off}= 19 

di/dt_on= 2825 A/µs

di/dt_off= 2825 A/µs

_GE= +15/-7 V

K/W

per IGBT

1.31

Rev. 0 – 14.06.2012

12 3 4 5

中文翻译

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