Datasheet > SK 25 DGD 12 T4 Tp

SK 25 DGD 12 T4 Tp

更新时间： 2023-12-06 20:10:01

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
7页	651K
描述
IGBT Modules SEMITOP 4 Press-Fit (61x55x12)

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SK 25 DGD 12 T4 Tp 数据手册

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SK25DGD12T4Tp

Absolute Maximum Ratings

Symbol Conditions

IGBT 1

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

-20 ... 20

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

T_j= 150 °C

I_C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITOP^®4 Press-Fit

I_CRM= 3 x I_Cnom

V_CC= 800 V

3-phase bridge rectifier +

3-phase bridge inverter

t_psc

T_j

_GE≤ 15 V

_CES≤ 1200 V

T_j= 150 °C

µs

°C

-40 ... 175

Absolute Maximum Ratings

Symbol Conditions

Diode 1

SK25DGD12T4Tp

Values

Unit

Features

T_j= 25 °C

V_RRM

I_F

1600

370

270

364

A²s

°C

• One screw mounting module

• Solder free mounting with Press-Fit

terminals

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

T_j= 150 °C

• Fully compatible with other SEMITOP^®

Press-Fit types

I_F

T_j= 150 °C

• Improved thermal performances by

aluminium oxide substrate

I_Fnom

I_FSM

T_j= 25 °C

T_j= 150 °C

10 ms

sin 180°

• Trench4 IGBT technology

• CAL4F technology FWD

i²t

T_j

10 ms, sin 180°, T_j= 150 °C

• Integrated NTC temperature sensor

• UL recognized, file no. E 63 532

-40 ... 150

Typical Applications*

• Motor drives

Absolute Maximum Ratings

Symbol Conditions

Diode 2

Values

Unit

T_j= 25 °C

V_RRM

I_F

1200

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

T_j= 150 °C

I_F

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

100

-40 ... 175

°C

I_FRM= 2 x I_Fnom

10 ms, sin 180°, T_j= 150 °C

Absolute Maximum Ratings

Symbol Conditions

Module

Values

Unit

I_t(RMS)

T_stg

V_isol

T_terminal= 100 °C, T_S= 60°C, per pin

-40 ... 125

2500

°C

AC, sinusoidal, t = 1 min

DGD-T

Rev. 1.0 – 05.10.2017

12 3 4 5 6 7

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