Datasheet > SK 35 GAR 12T4

SK 35 GAR 12T4

更新时间： 2024-11-06 14:54:47

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	156K
描述
IGBT Modules SEMITOP 2 (41x28x12)

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中文翻译

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数据手册

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SK 35 GAR 12T4 数据手册

SK 35 GAR 12T4

Absolute Maximum Ratings

Symbol Conditions

Chopper IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

105

T_s= 25 °C

T_s= 70 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3 x I_Cnom

-20 ... 20

SEMITOP^®2

IGBT module

SK 35 GAR 12T4

Features

V_CC= 800 V

V_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

V_CES≤ 1200 V

T_j

-40 ... 175

Chopper Diode

T_s= 25 °C

T_s= 70 °C

I_F

105

170

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 3 x I_Fnom

10 ms, sin 180°, T_j= 150 °C

ꢀ Compact design

-40 ... 175

°C

ꢀ One screw mounting

Freewheeling Diode

ꢀ Heat transfer and isolation through

direct copper bonded aluminium oxide

ceramic (DCB)

T_s= 25 °C

T_s= 70 °C

I_F

105

170

T_j= 175 °C

ꢀ High short circuit capability

ꢀ Trench4 IGBT technology

ꢀ CAL4F diode technology

ꢀ V_CE,satwith positive coefficient

ꢀ UL recognized, file no. E 63 532

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 3xI_Fnom

10 ms, sin 180°, T_j= 150 °C

AC, sinusoidal, t = 1 min

-40 ... 175

°C

Module

I_t(RMS)

T_stg

Typical Applications*

ꢀ Inverter

ꢀ Motor drive

°C

-40 ... 125

2500

V_isol

Characteristics

Symbol Conditions

Chopper IGBT

min.

typ.

max.

Unit

I_C= 35 A

T_j= 25 °C

V_CE(sat)

1.85

2.25

2.1

_GE= 15 V

T_j= 150 °C

2.45

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.8

0.7

30.0

44.3

5.8

0.9

0.8

34.3

47.1

6.5

m



chiplevel

V_GE= 15 V

chiplevel

V_GE= V_CEV, I_C= 1.2 mA

T_j= 25 °C

V_GE(th)

I_CES

0.062

0.186

V_GE= 0 V

_CE= 1200 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

1.95

0.155

0.115

189

V_CE= 25 V

_GE= 0 V

- 8 V...+ 15 V

T_j= 25 °C

R_Gint

GAR

Rev. 0 – 03.06.2013

12 3 4 5

中文翻译

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