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SK12H45A0G PDF预览

SK12H45A0G

更新时间: 2024-09-16 01:06:39
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TSC /
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描述
Schottky Barrier Rectifier

SK12H45A0G 数据手册

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SK12H45 thru SK12H60  
Taiwan Semiconductor  
CREAT BY ART  
Schottky Barrier Rectifier  
FEATURES  
- Low forward voltage drop  
- Low power loss, high efficiency  
- Guardring for overvoltage protection  
- High surge current capability  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
MECHANICAL DATA  
Case: DO-201AD  
DO-201AD  
Molding compound, UL flammability classification rating 94V-0  
Base P/N with suffix "G" on packing code - halogen-free  
Base P/N with prefix "H" on packing code - AEC-Q101 qualified  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test,  
with prefix "H" on packing code meet JESD 201 class 2 whisker test  
Weight: 1.3 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
PARAMETER  
SK12H45  
SK12H60  
SYMBOL  
VRRM  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
45  
31  
45  
60  
42  
60  
V
V
V
A
VRMS  
Maximum DC blocking voltage  
Maximum average forward rectified current  
VDC  
IF(AV)  
12  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
320  
A
V
Maximum instantaneous forward voltage (Note 1)  
IF= 12 A  
VF  
0.55  
0.70  
Maximum DC reverse current  
at rated DC blocking voltage  
@TJ=25 ℃  
0.15  
20  
IR  
mA  
@TJ=100 ℃  
RθJC  
RθJA  
10  
30  
OC/W  
Typical thermal resistance  
Junction temperature range  
- in DC forward mode  
OC  
OC  
TJ  
<=200  
Storage temperature range  
TSTG  
- 50 to +175  
Note 1: Pulse test with PW=300μs, 1% duty cycle  
Document Number: DS_D1308046  
Version: E13  

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