Datasheet > SiSS588DN

SiSS588DN

更新时间： 2023-12-06 20:11:20

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	192K
描述
N-Channel 80 V (D-S) MOSFET

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SiSS588DN 数据手册

SiSS588DN

Vishay Siliconix

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

0.05

0.04

0.03

0.02

0.01

10000

100

10000

1000

100

I_D= 10 A

1000

T_J= 150 °C

T_J= 25 °C

T_J= 125 °C

100

0.1

0.01

T_J= 25 °C

0.2

0.4

0.6

0.8

1.0

1.2

V_SD- Source-to-Drain Voltage (V)

V_GS- Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Axis Title

0.5

0.2

10000

1000

100

500

400

300

200

100

10000

1000

100

-0.1

-0.4

-0.7

-1.0

I_D= 5 mA

I_D= 250 μA

-50 -25

75 100 125 150

0.0001

0.001

0.01

0.1

T_J- Junction Temperature (°C)

t - Time (s)

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

Axis Title

1000

10000

I_DMlimited

I_Dlimited

100

1000

100 μs

1 ms

10 ms

100

100 ms

Limited by R_DS(on)

0.1

0.01

10s

T_A= 25 °C,

single pulse

BVDSS limited

0.01

0.1

100

V_DS- Drain-to-Source Voltage (V)

Safe Operating Area

Note

a. V_GS> minimum V_GSat which R_DS(on)is specified

S23-0900-Rev. B, 30-Oct-2023

Document Number: 63141

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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