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SIHFR110TR-GE3 PDF预览

SIHFR110TR-GE3

更新时间: 2024-10-17 14:31:03
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
11页 1479K
描述
TRANSISTOR 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power

SIHFR110TR-GE3 技术参数

生命周期:Active零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.07雪崩能效等级(Eas):75 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):4.3 A
最大漏极电流 (ID):4.3 A最大漏源导通电阻:0.54 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):25 W最大脉冲漏极电流 (IDM):17 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SIHFR110TR-GE3 数据手册

 浏览型号SIHFR110TR-GE3的Datasheet PDF文件第2页浏览型号SIHFR110TR-GE3的Datasheet PDF文件第3页浏览型号SIHFR110TR-GE3的Datasheet PDF文件第4页浏览型号SIHFR110TR-GE3的Datasheet PDF文件第5页浏览型号SIHFR110TR-GE3的Datasheet PDF文件第6页浏览型号SIHFR110TR-GE3的Datasheet PDF文件第7页 
IRFR110, SiHFR110  
Vishay Siliconix  
Power MOSFET  
FEATURES  
Halogen-free According to IEC 61249-2-21  
Definition  
PRODUCT SUMMARY  
VDS (V)  
100  
• Dynamic dV/dt Rating  
RDS(on) (Ω)  
VGS = 10 V  
0.54  
• Repetitive Avalanche Rated  
• Surface Mount (IRFR110, SiHFR110)  
• Available in Tape and Reel  
• Fast Switching  
Qg (Max.) (nC)  
Qgs (nC)  
8.3  
2.3  
3.8  
Qgd (nC)  
Configuration  
Single  
• Ease of Paralleling  
• Compliant to RoHS Directive 2002/95/EC  
D
DESCRIPTION  
DPAK  
(TO-252)  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
D
G
The DPAK is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. Power  
dissipation levels up to 1.5 W are possible in typical surface  
mount applications.  
S
G
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
SiHFR110-GE3  
IRFR110PbF  
SiHFR110-E3  
IRFR110  
DPAK (TO-252)  
SiHFR110TRL-GE3  
IRFR110TRLPbFa  
SiHFR110TL-E3a  
IRFR110TRLa  
DPAK (TO-252)  
SiHFR110TR-GE3  
IRFR110TRPbFa  
SiHFR110T-E3a  
IRFR110TRa  
DPAK (TO-252)  
Lead (Pb)-free and Halogen-free  
SiHFR110TRR-GE3  
IRFR110TRRPbFa  
SiHFR110TR-E3a  
Lead (Pb)-free  
SnPb  
-
-
SiHFR110  
SiHFR110TLa  
SiHFR110Ta  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
100  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
TC = 25 °C  
4.3  
Continuous Drain Current  
VGS at 10 V  
ID  
TC = 100 °C  
2.7  
A
Pulsed Drain Currenta  
IDM  
17  
Linear Derating Factor  
0.20  
0.020  
75  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
EAS  
IAR  
mJ  
A
4.3  
Repetitive Avalanche Energya  
EAR  
2.5  
mJ  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
T
C = 25 °C  
25  
PD  
W
TA = 25 °C  
2.5  
dV/dt  
5.5  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
260d  
°C  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 8.1 mH, Rg = 25 Ω, IAS = 4.3 A (see fig. 12).  
c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91265  
S10-1122-Rev. E, 10-May-10  
www.vishay.com  
1

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Dynamic dV/dt Rating