5秒后页面跳转
SIHF730STL-E3 PDF预览

SIHF730STL-E3

更新时间: 2024-11-23 15:51:15
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 191K
描述
TRANSISTOR 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SMD-220, 3 PIN, FET General Purpose Power

SIHF730STL-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
风险等级:5.08其他特性:AVALANCHE RATED
雪崩能效等级(Eas):290 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:400 V最大漏极电流 (Abs) (ID):5.5 A
最大漏极电流 (ID):5.5 A最大漏源导通电阻:1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):74 W
最大脉冲漏极电流 (IDM):22 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SIHF730STL-E3 数据手册

 浏览型号SIHF730STL-E3的Datasheet PDF文件第2页浏览型号SIHF730STL-E3的Datasheet PDF文件第3页浏览型号SIHF730STL-E3的Datasheet PDF文件第4页浏览型号SIHF730STL-E3的Datasheet PDF文件第5页浏览型号SIHF730STL-E3的Datasheet PDF文件第6页浏览型号SIHF730STL-E3的Datasheet PDF文件第7页 
IRF730S, SiHF730S  
Vishay Siliconix  
Power MOSFET  
FEATURES  
Halogen-free According to IEC 61249-2-21  
Definition  
• Surface Mount  
PRODUCT SUMMARY  
VDS (V)  
400  
R
DS(on) ()  
VGS = 10 V  
1.0  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
• Repetitive Avalanche Rated  
• Fast Switching  
Qg (Max.) (nC)  
38  
5.7  
Q
Q
gs (nC)  
gd (nC)  
22  
• Ease of Paralleling  
Configuration  
Single  
• Simple Drive Requirements  
• Compliant to RoHS Directive 2002/95/EC  
D
DESCRIPTION  
D2PAK (TO-263)  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The D2PAK (TO-263) is a surface mount power package  
capable of accommodating die size up to HEX-4. It provides  
the highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK (TO-263) is suitable for high current applications  
because of its low internal connection resistance and can  
dissipate up to 2.0 W in a typical surface mount application.  
S
D
G
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and Halogen-free  
D2PAK (TO-263)  
D2PAK (TO-263)  
SiHF730STRL-GE3a  
IRF730STRLPbFa  
SiHF730STL-E3a  
SiHF730STL-E3a  
D2PAK (TO-263)  
SiHF730S-GE3  
IRF730SPbF  
SiHF730S-E3  
SiHF730S-E3  
SiHF730STRR-GE3a  
-
-
-
Lead (Pb)-free  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
Gate-Source Voltage  
SYMBOL  
LIMIT  
400  
20  
UNIT  
VDS  
VGS  
V
TC = 25 °C  
TC = 100 °C  
5.5  
3.5  
22  
Continuous Drain Current  
VGS at 10 V  
ID  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.59  
0.025  
290  
5.5  
7.4  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Avalanche Currenta  
EAS  
IAR  
EAR  
mJ  
A
mJ  
Repetitive Avalanche Energya  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TC = 25 °C  
TA = 25 °C  
74  
3.1  
4.0  
PD  
W
V/ns  
°C  
dV/dt  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 5.5 A (see fig. 12).  
c. ISD 5.5 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91048  
S11-1048-Rev. C, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SIHF730STL-E3相关器件

型号 品牌 获取价格 描述 数据表
SIHF730STRL-GE3 VISHAY

获取价格

TRANSISTOR 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLI
SIHF734 VISHAY

获取价格

Power MOSFET
SIHF734-E3 VISHAY

获取价格

Power MOSFET
SIHF737LC VISHAY

获取价格

TRANSISTOR 6.1 A, 300 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN,
SIHF740 VISHAY

获取价格

Power MOSFET
SIHF740A VISHAY

获取价格

Power MOSFET
SIHF740A-E3 VISHAY

获取价格

Power MOSFET
SIHF740AL VISHAY

获取价格

Power MOSFET
SIHF740AL-E3 VISHAY

获取价格

Power MOSFET
SIHF740AL-GE3 VISHAY

获取价格

TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND