Datasheet > SIHF730STRL-GE3

SIHF730STRL-GE3

更新时间： 2024-11-19 15:51:15

品牌	Logo	应用领域
威世 - VISHAY		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	191K
描述
TRANSISTOR 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SMD-220, 3 PIN, FET General Purpose Power

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SIHF730STRL-GE3 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PSSO-G2
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.08	其他特性：	AVALANCHE RATED
雪崩能效等级（Eas）：	290 mJ	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	400 V	最大漏极电流 (Abs) (ID)：	5.5 A
最大漏极电流 (ID)：	5.5 A	最大漏源导通电阻：	1 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	74 W
最大脉冲漏极电流 (IDM)：	22 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

SIHF730STRL-GE3 数据手册

IRF730S, SiHF730S

Vishay Siliconix

Power MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

PRODUCT SUMMARY

V_DS(V)

400

_DS(on)()

V_GS= 10 V

1.0

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

Q_g(Max.) (nC)

5.7

_gs(nC)

_gd(nC)

• Ease of Paralleling

Configuration

Single

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

D²PAK (TO-263)

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK (TO-263) is a surface mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

D²PAK (TO-263)

SiHF730STRL-GE3^a

IRF730STRLPbF^a

SiHF730STL-E3^a

D²PAK (TO-263)

SiHF730S-GE3

IRF730SPbF

SiHF730S-E3

SiHF730STRR-GE3^a

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

LIMIT

400

UNIT

V_DS

V_GS

T_C= 25 °C

T_C= 100 °C

5.5

3.5

Continuous Drain Current

V_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.59

0.025

290

5.5

7.4

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Avalanche Current^a

E_AS

I_AR

E_AR

Repetitive Avalanche Energy^a

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_C= 25 °C

T_A= 25 °C

3.1

4.0

P_D

V/ns

°C

dV/dt

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 16 mH, R_g= 25 , I_AS= 5.5 A (see fig. 12).

c. I_SD 5.5 A, dI/dt  90 A/μs, V_DD V_DS, T_J 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91048

S11-1048-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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