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SIE830DF-T1-GE3 PDF预览

SIE830DF-T1-GE3

更新时间: 2024-09-25 21:02:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 122K
描述
N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel

SIE830DF-T1-GE3 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
配置:Single最大漏极电流 (Abs) (ID):50 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):104 W
子类别:FET General Purpose Powers表面贴装:YES
Base Number Matches:1

SIE830DF-T1-GE3 数据手册

 浏览型号SIE830DF-T1-GE3的Datasheet PDF文件第2页浏览型号SIE830DF-T1-GE3的Datasheet PDF文件第3页浏览型号SIE830DF-T1-GE3的Datasheet PDF文件第4页浏览型号SIE830DF-T1-GE3的Datasheet PDF文件第5页浏览型号SIE830DF-T1-GE3的Datasheet PDF文件第6页浏览型号SIE830DF-T1-GE3的Datasheet PDF文件第7页 
SiE830DF  
Vishay Siliconix  
New Product  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Extremely Low Qgd WFET® Technology for  
ID (A)a  
Low Switching Losses  
RoHS  
Ultra Low Thermal Resistance Using  
Top-Exposed PolarPAK® Package for  
Double-Sided Cooling  
Leadframe-Based New Encapsulated Package  
- Die Not Exposed  
Silicon Package  
COMPLIANT  
VDS (V)  
Qg (Typ)  
rDS(on) (Ω)  
Limit  
Limit  
0.0042 at V = 10 V  
GS  
120  
50  
30  
33 nC  
0.0048 at V = 4.5 V  
GS  
112  
50  
- Same Layout Regardless of Die Size  
Package Drawing  
Low Qgd/Qgs Ratio Helps Prevent Shoot-Through  
100 % Rg and UIS Tested  
PolarPAK  
APPLICATIONS  
10  
D
9
G
8
S
7
S
6
D
6
7
S
4
8
9
10  
D
VRM  
Point-of-Load  
Synchronous Rectification  
D
D
G
D
D
1
G
2
S
3
S
4
D
5
5
3
2
1
G
Top View  
Top surface is connected to pins 1, 5, 6, and 10  
Bottom View  
S
N-Channel MOSFET  
Ordering Information: SiE830DF-T1-E3 (Lead (Pb)-free)  
For Related Documents  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
Unit  
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
12  
V
120 (Silicon Limit)  
50a (Package Limit)  
TC = 25 °C  
50a  
27b, c  
21.6b, c  
80  
Continuous Drain Current (TJ = 150 °C)  
ID  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
A
Pulsed Drain Current  
IDM  
IS  
50a  
TC = 25 °C  
TA = 25 °C  
Continuous Source-Drain Diode Current  
4.3b, c  
30  
45  
104  
66  
5.2b, c  
3.3b, c  
A
mJ  
Single Pulse Avalanche Current  
Avalanche Energy  
IAS  
EAS  
T
C = 25 °C  
T
T
C = 25 °C  
C = 70 °C  
PD  
Maximum Power Dissipation  
W
TA = 25 °C  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 50 to 150  
260  
°C  
Notes:  
a. Package limited is 50 A.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 sec.  
d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 74422  
S-62482-Rev. A, 04-Dec-06  
www.vishay.com  
1

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