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SI9978DW-T1

更新时间: 2024-09-14 21:55:55
品牌 Logo 应用领域
威世 - VISHAY 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
6页 68K
描述
Configurable H-Bridge Driver

SI9978DW-T1 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SOIC包装说明:SOP,
针数:24Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.35Is Samacsys:N
高边驱动器:YES输入特性:SCHMITT TRIGGER
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-PDSO-G24
JESD-609代码:e0长度:15.3924 mm
功能数量:1端子数量:24
最高工作温度:85 °C最低工作温度:-40 °C
输出特性:OPEN-DRAIN标称输出峰值电流:0.5 A
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
认证状态:Not Qualified座面最大高度:2.54 mm
最大供电电压:17.5 V最小供电电压:14.5 V
标称供电电压:16 V电源电压1-最大:40 V
电源电压1-分钟:20 V表面贴装:YES
技术:MOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:7.49 mm
Base Number Matches:1

SI9978DW-T1 数据手册

 浏览型号SI9978DW-T1的Datasheet PDF文件第2页浏览型号SI9978DW-T1的Datasheet PDF文件第3页浏览型号SI9978DW-T1的Datasheet PDF文件第4页浏览型号SI9978DW-T1的Datasheet PDF文件第5页浏览型号SI9978DW-T1的Datasheet PDF文件第6页 
Si9978  
Vishay Siliconix  
Configurable H-Bridge Driver  
FEATURES  
D H-Bridge or Dual Half-Bridge Operation  
D 20- to 40-V Supply  
D Cross-Conduction Protected  
D Current Limit  
D ESD Protected  
D Fault Output  
D Static (dc) Operation  
D Undervoltage Lockout  
DESCRIPTION  
The Si9978 is an integrated driver for an n-channel MOSFET  
H-bridge. The mode control allows operation as either a full  
H-bridge driver or as two independent half-bridges. The  
DIR/PWM input configuration allows easy implementation of  
either sign/magnitude or anti-phase PWM drive schemes for  
full H-bridges. Schmitt triggers on the inputs provide logic  
signal compatibility and hysteresis for increased noise  
immunity. An internal low-voltage regulator allows the device  
to be powered directly from a system supply of 20 to 40 volts.  
All n-channel gates are driven directly from low-impedance  
outputs. The addition of one external capacitor per half-bridge  
allows internal circuitry to level shift both the power supply and  
logic signal for the high-side n-channel gate drives. Internal  
charge pumps replace leakage current lost in the high-side  
driver circuits to provide “static” (dc) operation in any output  
condition. Protection features include an undervoltage  
lockout, cross-conduction prevention logic, and overcurrent  
monitors.  
The Si9978 is available in both standard and lead (Pb)-free,  
24-pin wide-body SOIC (surface mount) packages, specified  
to operate over the industrial (40 to +85_C) temperature  
range.  
FUNCTIONAL BLOCK DIAGRAM  
Bootstrap Reg.  
23  
24  
V+  
CAP  
A
Charge Pump  
Low-Voltage  
Regulator  
CAP  
CAP  
B
21  
22  
A
GT  
A
1
High-Side  
U.V. Lockout  
V
DD  
S
A
V
DD  
Low-Side  
U.V. Lockout  
Bootstrap Reg.  
Charge Pump  
19  
17  
18  
CAP  
B
V
V
V
V
V
GT  
B
DD  
3
DIR/IN  
QS/IN  
A
DD  
5
4
6
7
2
S
B
B
V
DD  
V
DD  
DD  
DD  
Input  
Logic  
PWM/EN  
B
20  
MODE  
BRK  
GB  
GB  
A
DD  
DD  
V
16  
15  
B
EN/EN  
A
8
9
CL/FAULT  
GND  
B
FAULT/FAULT  
A
11  
12  
One Shot  
R /C  
A
+
A
13  
14  
IL +  
A
R /C  
B
One Shot  
+
B
IL +  
B
Document Number: 70011  
S-40804—Rev. E, 26-Apr-04  
www.vishay.com  
1

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