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SI9976DY-T1 PDF预览

SI9976DY-T1

更新时间: 2024-11-09 06:11:39
品牌 Logo 应用领域
威世 - VISHAY 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
6页 84K
描述
N-Channel Half-Bridge Driver

SI9976DY-T1 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SOIC包装说明:SOP,
针数:14Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.33Is Samacsys:N
其他特性:ALSO REQUIRES A 20V TO 40V SUPPLY高边驱动器:YES
输入特性:SCHMITT TRIGGER接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G14JESD-609代码:e0
长度:8.65 mm功能数量:1
端子数量:14最高工作温度:85 °C
最低工作温度:-40 °C输出特性:TOTEM-POLE
标称输出峰值电流:0.5 A输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:1.75 mm最大供电电压:16.5 V
最小供电电压:4.5 V电源电压1-最大:40 V
电源电压1-分钟:20 V表面贴装:YES
技术:MOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3.9 mm
Base Number Matches:1

SI9976DY-T1 数据手册

 浏览型号SI9976DY-T1的Datasheet PDF文件第2页浏览型号SI9976DY-T1的Datasheet PDF文件第3页浏览型号SI9976DY-T1的Datasheet PDF文件第4页浏览型号SI9976DY-T1的Datasheet PDF文件第5页浏览型号SI9976DY-T1的Datasheet PDF文件第6页 
Si9976  
Vishay Siliconix  
N-Channel Half-Bridge Driver  
FEATURES  
APPLICATIONS  
D Single Input for High-Side and Low-Side MOSFETs  
D 20- to 40-V Supply  
D Power Supplies  
D Motor Drives  
D Static (dc) Operation  
D Office Automation  
D Computer Peripherals  
D Industrial Controllers  
D Robotics  
D Cross-Conduction Protected  
D Undervoltage Lockout  
D ESD and Short Circuit Protected  
D Fault Feedback  
D Medical Equipment  
DESCRIPTION  
The Si9976 is an integrated driver for an n-channel MOSFET  
half-bridge. Schmitt trigger inputs provide logic signal  
compatibility and hysteresis for increased noise immunity. An  
internal low-voltage regulator allows the device to be powered  
directly from a system supply of 20 to 40 volts. Both half-bridge  
n-channel gates are driven directly with low-impedance  
outputs. Addition of one external capacitor allows an internal  
circuit to level shift both the power supply and logic signal for  
the half-bridge high-side n-channel gate drive. An internal  
charge pump replaces leakage current lost in the high-side  
driver circuit to provide “static” (dc) operation in any output  
condition. Protection features include an undervoltage  
lockout, cross-conduction prevention logic, and a short circuit  
monitor.  
The Si9976 is available in both standard and lead (Pb)-free,  
14-pin SOIC (surface mount) packages, specified to operate  
over the industrial (40 to 85_C) temperature range.  
FUNCTIONAL BLOCK DIAGRAM  
V+  
Bootstrap  
Regulator  
CAP  
2
V+  
3
C
Boot  
Low Voltage  
Regulator  
Under Voltage  
Lockout 1  
Charge  
Pump  
V
DD  
V
DD  
Under Voltage  
Lockout 2  
4
G
1
12  
13  
V
CC  
7
8
S
1
Short Circuit  
& UVL Detect  
Half-  
Bridge  
Output  
FAULT  
IN  
5
250 ns  
Delay  
0.01 mF  
300 ns  
Delay  
Substrate  
G
2
9
EN  
6
R
S
Q
10  
Enable Latch  
GND  
GND  
Document Number: 70016  
S-40757—Rev. F, 19-Apr-04  
www.vishay.com  
1

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