Datasheet > SI4835DDY_17

SI4835DDY_17

更新时间： 2024-11-24 01:19:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	177K
描述
P-Channel 30-V (D-S) MOSFET

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SI4835DDY_17 数据手册

New Product

Si4835DDY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^d

Available

TrenchFET^®Power MOSFET

100 % R_gTested

100 % UIS Tested

0.018 at V_GS= - 10 V

0.030 at V_GS= - 4.5 V

- 13

- 10

•

- 30

22 nC

APPLICATIONS

•

Load Switches

- Notebook PCs

- Desktop PCs

SO-8

Top View

Ordering Information: Si4835DDY-T1-E3 (Lead (Pb)-free)

Si4835DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

- 30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

- 13

- 10.5

- 8.7^{a, b}

- 7.7^{a, b}

- 50

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current

- 4.6

2.0^{a, b}

_C= 25 °C

_A= 25 °C

Continuous Source-Drain Diode Current

I_AS

Avalanche Current

- 20

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

_C= 25 °C

_C= 70 °C

_A= 25 °C

5.6

3.6

P_D

Maximum Power Dissipation

2.5^{a, b}

1.6^{a, b}

- 55 to 150

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{a, c}

t ≤ 10 s

Steady State

°C/W

Maximum Junction-to-Foot

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 85 °C/W.

d. Based on T_C= 25 °C.

Document Number: 69953

S09-0136-Rev. B, 02-Feb-09

www.vishay.com

12 3 4 5 6 7...9

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